PNP EPITAXIAL PLANAR TRANSISTOR
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ISSUED DATE :2003/10/24 REVISED DATE :2004/11/29B
GSB649A
Description Features Package Dimensions
D...
Description
www.DataSheet4U.com
ISSUED DATE :2003/10/24 REVISED DATE :2004/11/29B
GSB649A
Description Features Package Dimensions
D
P N P E P I TA X I A L P L A N A R T R A N S I S T O R
The GSB649A is designed for frequency power amplifier.
*Low frequency power amplifier Complementary pair with GSD669A
E S1
TO-92
A
b1 S E A T IN G PLANE
REF.
L
e1
e
b
C
A S1 b b1 C ,unless otherwise specified)
Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF. D E L e1 e
Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66
Absolute Maximum Ratings(Ta = 25
Parameter
Ratings
Unit
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Collect Current*(Pulse) Junction Temperature Storage Temperature Range Total Power Dissipation Total Power Dissipation (TC=25 )
VCBO VCEO VEBO IC ICP Tj TsTG PD PD
,unless otherwise specified)
-180 -160 -5 -1.5 -3 +150 -55 ~ +150 1 20
V V V A A
W W
Electrical Characteristics(Ta = 25
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. -180 -160 -5 60 30 Typ. 140 27
Max. -10 -1 -1.5 200 -
Unit V V V uA V V
Test Conditions IC=-1mA ,IE=0 IC=-10mA ,RBE= IE=-1mA ,IC=0 VCB=-160V , IE=0 lC=-600mA,IB=-50mA VCE=-5V,IC=-150mA VCE=-5V,IC=-150mA VCE=-5V,IC=-500mA VCE=-5V,IC=-150mA VCB=-10V ,IE=0,f=1MHz
* Pulse Test: Pulse Width 380us, Duty Cycle 2%
MHz pF
Classification Of hFE1
Rank Range B 60-120 C 100-200
1/3
ISSUED DATE :2003/10/24 REVISED DATE :200...
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