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GSB649A

GTM

PNP EPITAXIAL PLANAR TRANSISTOR

www.DataSheet4U.com ISSUED DATE :2003/10/24 REVISED DATE :2004/11/29B GSB649A Description Features Package Dimensions D...


GTM

GSB649A

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Description
www.DataSheet4U.com ISSUED DATE :2003/10/24 REVISED DATE :2004/11/29B GSB649A Description Features Package Dimensions D P N P E P I TA X I A L P L A N A R T R A N S I S T O R The GSB649A is designed for frequency power amplifier. *Low frequency power amplifier Complementary pair with GSD669A E S1 TO-92 A b1 S E A T IN G PLANE REF. L e1 e b C A S1 b b1 C ,unless otherwise specified) Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings(Ta = 25 Parameter Ratings Unit Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Collect Current*(Pulse) Junction Temperature Storage Temperature Range Total Power Dissipation Total Power Dissipation (TC=25 ) VCBO VCEO VEBO IC ICP Tj TsTG PD PD ,unless otherwise specified) -180 -160 -5 -1.5 -3 +150 -55 ~ +150 1 20 V V V A A W W Electrical Characteristics(Ta = 25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. -180 -160 -5 60 30 Typ. 140 27 Max. -10 -1 -1.5 200 - Unit V V V uA V V Test Conditions IC=-1mA ,IE=0 IC=-10mA ,RBE= IE=-1mA ,IC=0 VCB=-160V , IE=0 lC=-600mA,IB=-50mA VCE=-5V,IC=-150mA VCE=-5V,IC=-150mA VCE=-5V,IC=-500mA VCE=-5V,IC=-150mA VCB=-10V ,IE=0,f=1MHz * Pulse Test: Pulse Width 380us, Duty Cycle 2% MHz pF Classification Of hFE1 Rank Range B 60-120 C 100-200 1/3 ISSUED DATE :2003/10/24 REVISED DATE :200...




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