GSBAT54

www.DataSheet4U.com ISSUED DATE :2005/01/05 REVISED DATE : G S B AT 5 4 / A / C / S S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 3 0 V, C U R R E N T 2 0 0 m A Description These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BCS. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Peak Repetitive Reverse Voltage Forward Continuous Current Peak Repetitive Forward Current Surge Forward Current(t 1.0s) Total Power Dissipation at Ta = 25 Symbol Tj Tstg VR IF IFRM IFSM PD Ratings -55 ~ +125 -55 ~ +150 30 200 300 600 225 V mA mA mA mW Unit Characteristics at Ta = 25 characteristics Reverse Breakdown Voltage Symbol V(BR)R VF(1) VF(2) Forward Voltage VF(3) VF(4) VF(5) Reverse Leakage Current Total Capacitance Reverse Recover Time IR CT Trr Min 30 Max. 240 320 400 500 1000 2.0 10 5 Unit V mV mV mV mV mV A pF ns IR=10 A IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=25V VR=1V, f=1MHz IF=IR=10mA, IR(Rec)=1mA Test Conditions 1/2 ISSUED DATE :2005/01/05 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves t...