GSBC846

www.DataSheet4U.com ISSUED DATE :2005/06/08 REVISED DATE : GSBC846 Description Package Dimensions NPN EPITAXIAL PLANAR TRANSISTOR The GSBC846 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits. REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 80 65 6 100 225 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VBE(on)1 VBE(on)2 hFE fT Cob at Ta = 25 Min. 80 65 6 580 110 Typ. 90 200 700 900 300 3.5 Max. 15 250 600 700 770 800 6 MHz pF Unit V V V nA mV mV mV mV mV mV IC=100uA IC=1mA IE=10uA VCB=30V IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=2mA VCE=5V, IC=10mA, f=100MHz VCB=10V, f=1MHz, IE=0A Test Conditions Classification Of hFE Rank Range 8AA 110 - 220 8AB 200 - 450 8AC 420 - 800 1/2 ISSUED DATE :2005/06/08 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval ...