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ISSUED DATE :2005/06/08 REVISED DATE :
GSBC848
Description Package Dimensions
NPN EPITAXIAL PLANAR...
www.DataSheet4U.com
ISSUED DATE :2005/06/08 REVISED DATE :
GSBC848
Description Package Dimensions
NPN EPITAXIAL PLANAR
TRANSISTOR
The GSBC848 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits.
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 30 30 5 100 225 V V V mA mW Unit
Characteristics
Symbol BVCBO BVCEO BVEBO ICBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VBE(on)1 VBE(on)2 hFE fT Cob
at Ta = 25
Min. 30 30 5 580 110 Typ. 90 200 700 900 300 3.5 Max. 15 250 600 700 770 800 6 MHz pF Unit V V V nA mV mV mV mV mV mV IC=100uA IC=1mA IE=10uA VCB=30V IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=2mA VCE=5V, IC=10mA, f=100MHz VCB=10V, f=1MHz, IE=0A Test Conditions
Classification Of hFE
Rank Range 8CA 110 - 220 8CB 200 - 450 8CC 420 - 800
1/2
ISSUED DATE :2005/06/08 REVISED DATE :
Characteristics Curve
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