GSBC857

www.DataSheet4U.com ISSUED DATE :2005/01/21 REVISED DATE :2006/01/18B GSBC857 Description Package Dimensions PNP EPITAXIAL PLANAR TRANSISTOR The GSBC857 is designed for switching and AF amplifier application suitable for automatic insertion in thick and thin-film circuits. REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 -50 -45 -6 -100 225 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VBE(on)1 VBE(on)2 hFE fT Cob at Ta = 25 Min. -50 -45 -6 -600 110 Typ. -90 -250 -700 -900 150 Max. -15 -300 -650 -750 -800 800 6 MHz pF Unit V V V nA mV mV mV mV mV mV IC=-100uA IC=-1mA IE=-10uA VCB=-30V IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA VCE=-5V, IC=-2mA VCE=-5V, IC=-10mA VCE=-5V, IC=-2mA VCE=-5V, IC=-10mA VCB=-10V, f=1MHz, IE=0A Test Conditions Classification Of hFE Rank Range 9BA 110 - 220 9BB 200 - 450 9BC 420 - 800 1/2 ISSUED DATE :2005/01/21 REVISED DATE :2006/01/18B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is p...