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M5M5V108DFP Dataheets PDF



Part Number M5M5V108DFP
Manufacturers Renesas Technology
Logo Renesas Technology
Description CMOS STATIC RAM
Datasheet M5M5V108DFP DatasheetM5M5V108DFP Datasheet (PDF)

www.DataSheet4U.com To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi .

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www.DataSheet4U.com To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 7th.July.2000 Ver. 1.1 MITSUBISHI LSIs M5M5V108DFP,VP,KV -70H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current and ideal for the battery back-up application. The M5M5V108DVP,KV are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD). PIN CONFIGURATION (TOP VIEW) ADDRESS INPUTS FEATURES Access time (max) Power supply current Type name M5M5V108DFP,VP,KV-70H VCC Active stand-by (1MHz) (max) (max) 70ns 2.7~3.6V 5mA 12µA DATA INPUTS/ OUTPUTS NC 1 A16 2 A14 3 A12 4 A7 5 A6 6 A5 7 A4 8 A3 9 A2 10 A1 11 A0 12 DQ1 13 DQ2 14 DQ3 15 GND 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC ADDRESS A15 INPUT SELECT S2 CHIP INPUT WRITE CONTROL W INPUT A13 A8 ADDRESS INPUTS A9 A11 OUTPUT ENABLE OE INPUT A10 ADDRESS INPUT SELECT S1 CHIP INPUT DQ8 DQ7 DQ6 DATA INPUTS/ DQ5 OUTPUTS DQ4 Directly TTL compatible : All inputs and outputs Easy memory expansion and power down by S1,S2 Data hold on +2V power supply Three-state outputs : OR - tie capability OE prevents data contention in the I/O bus Common data I/O Package M5M5V108DFP ············ 32pin 525mil SOP 2 M5M5V108DVP,RV ············ 32pin 8 X 20 mm TSOP 2 M5M5V108DKV,KR ············ 32pin 8 X 13.4 mm TSOP A11 A9 A8 A13 W S2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 Outline 32P2M-A APPLICATION Small capacity memory units M5M5V108DVP,KV 25 24 23 22 21 20 19 18 17 OE A10 S1 DQ8 DQ7 DQ6 DQ5 DQ4 GND DQ3 DQ2 DQ1 A0 A1 A2 A3 Outline 32P3H-E(VP), 32P3K-B(KV) NC : NO CONNECTION 1 7th.July.2000 Ver. 1.1 MITSUBISHI LSIs M5M5V108DFP,VP,KV -70H 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM FUNCTION The operation mode of the M5M5V108D series are determined by a combination of the device control inputs S1,S2,W and OE. Each mode is summarized in the function table. A write cycle is executed whenever the low level W overlaps with the low level S 1 and the high level S2. The address must be set up before the write cycle and must be stable during the entire cycle. The data is latched into a cell on the trailing edge of W,S1 or S2,whichever occurs first,requiring the set-up and hold time relative to these edge to be maintained. The output enable input OE directly controls the output stage. Setting the OE at a high level, the output stage is in a high-impedance state, and the data bus contention problem in the write cycle is eliminated. A read cycle is executed by setting W at a high level and OE at a low level while S1 and S2 are in an active state(S1=L,S2=H). When setting S1 at a high level or S 2 at a low level, the chip are in a non-selectable mode in which both reading and writing are disabled. In this mode, the output stage is in a high- impedance state, allowing OR-tie with other chips and memory expansion by S1 and S2. The power supply current is reduced as low as the stand-by current which is specified as I CC3 or ICC4, and the memory data can be held at +2V power supply, enabling battery back-up operation during power failure or power-down operation in the nonselected mode. FUNCTION TABLE S1 X H L L L S2 L X H H H W X X L H H Mode DQ OE X Non selection High-impedance X Non selection High-impedance Din X Write Dout L Read High-impedance H ICC Stand-by Stand-by Active Active Active Note 1: "H" and "L" in this table mean VIH and VIL, respectively. 2: "X" in this table should be "H" or "L". BLOCK DIAGRAM * A3 9 A2 10 A5 7 A6 6 A7 5 A12 4 A14 3 A16 2 A15 31 17 18 15 1.


IRLZ44ZPBF M5M5V108DFP M5M5V108DKV


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