Memory FRAM
www.DataSheet4U.com
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-13101-3E
Memory FRAM
CMOS
256 K (32 K × 8) Bit
MB85R256
s...
Description
www.DataSheet4U.com
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-13101-3E
Memory FRAM
CMOS
256 K (32 K × 8) Bit
MB85R256
s DESCRIPTIONS
The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM MB85R256 is able to retain data without back-up battery. The memory cells used for the MB85R256 has inproved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and EEPROM in durability. The MB85R256 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
s FEATURES
Bit configuration: 32,768 words x 8 bits Read/write durability: 1010 times/bit (Min) Peripheral circuit CMOS construction Operating power supply voltage: 3.0 V to 3.6 V Operating temperature range: −40 °C to +85 °C 28-pin, SOP flat package 28-pin, TSOP(1) flat package
s PACKAGES
28-pin plastic SOP 28-pin plastic TSOP(1)
(FPT-28P-M17)
(FPT-28P-M03)
MB85R256
s PIN ASSIGNMENTS
(TOP VIEW)
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
VCC WE A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 22 23 24 25 26 27 28 1 2 3 4 5 6 7 21 20 19 18 17 16 15 14 13 12 11 10 9 8 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2
(FPT-28P-M17)
(FPT-2...
Similar Datasheet