K4Q153211M

www.DataSheet4U.com K4Q153211M, K4Q153212M 512K x 32Bit CMOS Quad CAS DRAM with EDO DESCRIPTION CMOS DRAM This is a 524,288 x 32 bit Extended Data Out CMOS DRAM. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle 1K, access time (-50 or -60), power consumption(Normal or Low power) and SOJ package type are optional features of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 512Kx32 EDO Mode Quad CAS DRAM is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES Part Identification - K4Q153211M-JC (5.0V, 1K Ref.) - K4Q153211M-JL (5.0V, 1K Ref. LP) - K4Q153212M-JC (3.3V, 1K Ref.) - K4Q153212M-JL (3.3V, 1K Ref. LP) Extended Data Out Mode operation (Fast Page Mode with Extended Data Out) Four separate CAS pins provide for separate I/O operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Self-refresh capability (L-ver only) TTL(5V)/LVTTL(3.3V) compatible inputs and outputs Early Write or output enable controlled write JEDEC Standard pinout Plastic SOJ 400mil x 1125mil package Single +5.0V±0.5V power supply(5V product) Single +3.3V±0.3V power supply(3.3V product) Active Power Dissipation Speed -50 -60 3...