(PDF) 1HN04CH Datasheet PDF | Sanyo Semicon Device





1HN04CH Datasheet PDF

Part Number 1HN04CH
Description N-Channel Silicon MOSFET General-Purpose Switching Device Applications
Manufacture Sanyo Semicon Device
Total Page 4 Pages
PDF Download Download 1HN04CH Datasheet PDF

Features: Datasheet pdf www.DataSheet4U.com Ordering number : E NA0925 1HN04CH SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 1H N04CH Features • General-Purpose Swi tching Device Applications 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Cu rrent (DC) Drain Current (Pulse) Allowa ble Power Dissipation Channel Temperatu re Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cy cle≤1% Mounted on a ceramic board (90 0mm2✕0.8mm) Conditions Ratings 100 ± 20 120 480 0.6 150 --55 to +150 Unit V V mA mA W °C °C Electrical Character istics at Ta=25°C Parameter Drain-to-S ource Breakdown Voltage Zero-Gate Volta ge Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfe r Admittance Static Drain-to-Source On- State Resistance Input Capacitance Outp ut Capacitance Reverse Transfer Capacit ance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=100V, V.

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1HN04CH datasheet
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Ordering number : ENA0925
1HN04CH
SANYO Semiconductors
DATA SHEET
1HN04CH
Features
4V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm20.8mm)
Ratings
100
±20
120
480
0.6
150
--55 to +150
Unit
V
V
mA
mA
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : LB
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, ID=60mA
ID=60mA, VGS=10V
ID=30mA, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
min
100
1.2
100
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
175 mS
6.1 8.0
7 9.8
19 pF
2.6 pF
1.3 pF
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90507PE TI IM TC-00000810 No. A0925-1/4

1HN04CH datasheet
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm (typ)
7015A-004
2.9
3
1
0.95
2
0.4
1HN04CH
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=50V, VGS=10V, ID=120mA
VDS=50V, VGS=10V, ID=120mA
VDS=50V, VGS=10V, ID=120mA
IS=120mA, VGS=0V
Ratings
min typ max
Unit
13 ns
7.8 ns
87 ns
60 ns
1.6 nC
0.25
nC
0.25
nC
0.83
1.2 V
Switching Time Test Circuit
0.15
0.05
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=50V
ID=60mA
RL=833
D VOUT
Rg
1HN04CH
P.G 50S
Rg=1.2k
ID -- VDS
120
4.0V
100
80
60 3.0V
40
20 VGS=2.5V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT12899
RDS(on) -- VGS
16
Ta=25°C
14
12
10
ID=30mA 60mA
8
6
4
2
0
0 2 4 6 8 10 12 14 16
Gate-to-Source Voltage, VGS -- V IT12901
250
VDS=10V
200
ID -- VGS
150
100
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Gate-to-Source Voltage, VGS -- V IT12900
RDS(on) -- Ta
16
14
12
10
8
6
V GVS=G4SV=,1I0DV=,3I0Dm=A60mA
4
2
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT12902
No. A0925-2/4




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