1HP04CH Datasheet PDF


Part Number

1HP04CH

Description

P-Channel Silicon MOSFET General-Purpose Switching Device

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
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Features Datasheet pdf www.DataSheet4U.com Ordering number : E NA0926 1HP04CH SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 1H P04CH Features • General-Purpose Swi tching Device Applications 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Cu rrent (DC) Drain Current (Pulse) Allowa ble Power Dissipation Channel Temperatu re Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cy cle≤1% Mounted on a ceramic board (90 0mm2✕0.8mm) Conditions Ratings --100 ±20 -80 --320 0.6 150 --55 to +150 Uni t V V mA mA W °C °C Electrical Chara cteristics at Ta=25°C Parameter Drain- to-Source Breakdown Voltage Zero-Gate Voltage Drai.
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1HP04CH Datasheet
www.DataSheet4U.com
Ordering number : ENA0926
1HP04CH
SANYO Semiconductors
DATA SHEET
1HP04CH
Features
4V drive.
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm20.8mm)
Ratings
--100
±20
--80
--320
0.6
150
--55 to +150
Unit
V
V
mA
mA
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : WB
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=--1mA, VGS=0V
VDS=--100V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--100µA
VDS=--10V, ID=--40mA
ID=--40mA, VGS=--10V
ID=--20mA, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
min
--100
--1.2
85
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
145 mS
13.5
18
15 21
14.5
pF
2.5 pF
1.0 pF
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82907PE TI IM TC-00000808 No. A0926-1/4




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