Applications. 2SA2192 Datasheet

2SA2192 Datasheet PDF


Part

2SA2192

Description

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

Manufacture

Sanyo Semicon Device

Page 4 Pages
Datasheet
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2SA2192 Datasheet
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Ordering number : ENA0307
2SA2192
SANYO Semiconductors
DATA SHEET
2SA2192 PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Applications
Relay drivers, lamp drivers, motor drivers.
Features
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
PW100µs
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
Conditions
VCB=--40V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--1A
VCE=--5V, IC=--1A
VCB=--10V, f=1MHz
IC=--5A, IB=--250mA
IC=--5A, IB=--250mA
Ratings
--50
--50
--50
--8
--10
--13
--2
0.95
20
150
--55 to +150
Unit
V
V
V
V
A
A
A
W
W
°C
°C
min
200
Ratings
typ
max
Unit
--10 µA
--10 µA
560
130 MHz
90 pF
--290
--580 mV
--0.93
--1.4 V
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71206 / 42506EA MS IM TB-00002245 No. A0307-1/4

2SA2192 Datasheet
Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
2SA2192
Symbol
Conditions
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=--100µA, IE=0A
IC=--100µA, RBE=0
IC=--1mA, RBE=
IE=--100µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
--50
--50
--50
--8
Ratings
typ
70
650
60
max
Package Dimensions
unit : mm
7518-003
Package Dimensions
unit : mm
7003-003
Unit
V
V
V
V
ns
ns
ns
6.5 2.3
5.0 0.5
4
6.5 2.3
5.0 0.5
4
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
IB2
RB
OUTPUT
RL
50+
100µF
VBE=5V
+
470µF
IC= --20IB1=20IB2= --3A
VCC= --20V
--5.0
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
IC -- VCE
--20mA
--18mA
--16mA
--14mA
--12mA
--10mA
--8mA
--6mA
--4mA
--2mA
IB=0mA
--0.5 --1.0 --1.5 --2.0
Collector-to-Emitter Voltage, VCE -- V
--10
VCE= --2V
--9
IC -- VBE
--8
--7
--6
--5
--4
--3
--2
--1
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE -- V IT10710
No. A0307-2/4


Features Datasheet pdf www.DataSheet4U.com Ordering number : E NA0307 2SA2192 SANYO Semiconductors DATA SHEET 2SA2192 Applications • P NP Epitaxial Planar Silicon Transistor High-Current Switching Applications R elay drivers, lamp drivers, motor drive rs. Features • • • • Adoption of MBIT process. Large current capacit ance. Low collector-to-emitter saturati on voltage. High-speed switching. Abso lute Maximum Ratings at Ta=25°C Parame ter Collector-to-Base Voltage Collector -to-Emitter Voltage Collector-to-Emitte r Voltage Emitter-to-Base Voltage Colle ctor Current Collector Current (Pulse) Base Current Collector Dissipation Junc tion Temperature Storage Temperature Sy mbol VCBO VCES VCEO VEBO IC ICP IB PC T j Tstg Tc=25°C PW≤100µs Conditions Ratings --50 --50 --50 --8 --10 --13 -- 2 0.95 20 150 --55 to +150 Unit V V V V A A A W W °C °C Electrical Characte ristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Sa.
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