2SA2203 Datasheet PDF


Part Number

2SA2203

Description

PNP Epitaxial Planar Silicon Transistor

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
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Features Datasheet pdf www.DataSheet4U.com Ordering number : E NA0542 2SA2203 SANYO Semiconductors DATA SHEET 2SA2203 Applications • P NP Epitaxial Planar Silicon Transistor High-Current Switching Applications D C / DC converter, Relay drivers, lamp d rivers, motor drivers. Features • • • • Adoption of FBET, MBIT p rocesses. Large current capacitance. Lo w collector-to-emitter saturation volta ge. High-speed switching. High allowabl e power dissipation. Specifications Ab solute Maximum Ratings at Ta=25°C Para meter Collector-to-Base Voltage Collect or-to-Emitter Voltage Collector-to-Emit ter Voltage Emitter-to-Base Voltage Col lector Current Collector Current (Pulse ) Base Current Collector Dissipation Junction Tem.
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2SA2203 Datasheet
www.DataSheet4U.com
Ordering number : ENA0542
2SA2203
SANYO Semiconductors
DATA SHEET
2SA2203 PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Applications
DC / DC converter, Relay drivers, lamp drivers, motor drivers.
Features
Adoption of FBET, MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=--50V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--100mA
VCE=--10V, IC=--500mA
VCB=--10V, f=1MHz
Ratings
--60
--60
--60
--7
--3
--5
--600
0.8
15
150
--55 to +150
Unit
V
V
V
V
A
A
mA
W
W
°C
°C
min
200
Ratings
typ
max
Unit
--1 µA
--1 µA
400
400 MHz
25 pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0806EA SY IM TC-00000305 No. A0542-1/4




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