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2SA2203 Dataheets PDF



Part Number 2SA2203
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP Epitaxial Planar Silicon Transistor
Datasheet 2SA2203 Datasheet2SA2203 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENA0542 2SA2203 SANYO Semiconductors DATA SHEET 2SA2203 Applications • PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications DC / DC converter, Relay drivers, lamp drivers, motor drivers. Features • • • • • Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter.

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www.DataSheet4U.com Ordering number : ENA0542 2SA2203 SANYO Semiconductors DATA SHEET 2SA2203 Applications • PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications DC / DC converter, Relay drivers, lamp drivers, motor drivers. Features • • • • • Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings --60 --60 --60 --7 --3 --5 --600 0.8 15 150 --55 to +150 Unit V V V V A A mA W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=-50V, IE=0A VEB=-4V, IC=0A VCE=-2V, IC=--100mA VCE=-10V, IC=--500mA VCB=-10V, f=1MHz Ratings min typ max --1 --1 200 400 25 400 MHz pF Unit µA µA Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0806EA SY IM TC-00000305 No. A0542-1/4 2SA2203 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=--1A, IB=--50mA IC=--1A, IB=--100mA IC=--1A, IB=--100mA IC=--10µA, IE=0A IC=--100µA, RBE=0Ω IC=--1mA, RBE=∞ IE=--10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --60 --60 --60 --7 35 480 28 Ratings min typ --110 -90 --0.85 max --220 --180 --1.2 Unit mV mV V V V V V ns ns ns Package Dimensions unit : mm (typ) 7518-003 6.5 5.0 2.3 1.5 Package Dimensions unit : mm (typ) 7003-003 0.5 4 4 7.0 1.5 6.5 5.0 2.3 0.5 5.5 5.5 7.0 0.8 1.6 7.5 1 0.5 0.6 2 0.8 1.2 3 0 to 0.2 1.2 0.6 2.5 0.85 0.7 0.85 0.5 1.2 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT 50Ω + 220µF VBE=5V IB1 OUTPUT IB2 VR 1kΩ RL + 470µF VCC= --30V IC= --10IB1=10IB2= --0.5A No. A0542-2/4 2SA2203 --3.0 IC -- VCE --2 50 mA --2 00 m A 0 --15 mA --3.0 IC -- VBE VCE= --2V --100mA --2.5 --2.5 Collector Current, IC -- A --2.0 --50mA Collector Current, IC -- A --2.0 --1.5 --20mA --1.5 --0.5 --0.5 0 0 IB=0mA --0.05 --0.10 --0.15 --0.20 --0.25 --0.30 --0.35 --0.40 --0.45 --0.50 0 0 --0.2 --0.4 Ta=7 5°C --0.6 --25°C --0.8 --1.0 25°C --5mA --1.0 --1.0 --1.2 IT11643 Collector-to-Emitter Voltage, VCE -- V 1000 7 5 IT11642 1000 hFE -- IC Base-to-Emitter Voltage, VBE -- V fT -- IC VCE= --2V Ta=75°C 25°C Gain-Bandwidth Product, fT -- MHz 7 5 VCE= --10V DC Current Gain, hFE 3 3 2 --25°C 2 100 7 5 100 7 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A 100 IT11644 5 Collector Current, IC -- A IT11645 Cob -- VCB f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V VCE(sat) -- IC IC / IB=10 3 2 Output Capacitance, Cob -- pF 7 5 --0.1 7 5 3 2 3 2 7 Ta= --0.01 7 °C --25 C 25° 7 --0.1 2 3 5 7 --1.0 2 3 5 5°C 10 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Base Voltage, VCB -- V 7 5 5 7 --100 IT11646 5 --0.01 2 3 5 VCE(sat) -- IC Collector Current, IC -- A 3 IT11647 VBE(sat) -- IC IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 --0.1 7 5 3 2 --1.0 Ta= --25°C 25°C 75° Ta= 2 2 3 5 7 C .


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