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Ordering number : ENA0437A
2SB1739 / 2SD2720
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SB1739 / 2SD2720
Features
• • • •
Compact Motor Driver Applications
Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter. Large current capacity.
Specifications ( ) : 2SB1739
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings (--)40 (--)30 (-)6 (-)3 (-)5 1 15 150 --55 to +150 Unit V V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Diode Forwad Voltage Base-to-Emitter Resistance Symbol ICBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO1 V(BR)CEO2 VF RBE Conditions VCB=(--)30V, IE=0A VCE=(--)2V, IC=(--)0.5A VCE=(--)2V, IC=(--)2A VCE=(--)2V, IC=(--)0.5A VCB=(--)10V, f=1MHz IC=(--)2A, IB=(-)100mA IC=(--)2A, IB=(-)100mA IC=(--)10µA, IE=0A IC=(--)10µA, RBE=∞ IC=(--)10mA, RBE=∞ IF=(--)0.5A 0.8 (-)40 (-)40 (-)30 (--)1.5 Ratings min 70 50 100 (55)40 (--0.28)0.23 (-0.6)0.5 (--)1.5 MHz pF V V V V V V kΩ typ max (--)1.0 Unit µA
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83006 MS IM / 72006EA MS IM TC-00000064 No. A0437-1/5
2SB1739 / 2SD2720
Package Dimensions unit : mm (typ) 7518-003
6.5 5.0 2.3
1.5
Package Dimensions unit : mm (typ) 7003-003
0.5 6.5 5.0 2.3
4
4
7.0
1.5
0.5
5.5
5.5
7.0
0.8 1.6
7.5
1
0.5 0.6
2
0.8
1.2
3
0 to 0.2 1.2
0.6
2.5
0.85 0.7
0.85
0.5
1.2
1
2
3
1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP
2.3
2.3
1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA
2.3
2.3
Electrical Connection
2SB1739
Collector
2SD2720
Collector
Base
RBE
Base
RBE
Emitter
Emitter
--1.0
IC -- VCE
2SB1739
--0.9
--9
A 0m
m
A
--8mA
1.0
IC -- VCE
2SD2720
9m
mA
--7mA
0.9
A
8mA
7mA
Collector Current, IC -- A
Collector Current, IC -- A
--0.8 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 0 --0.1 --0.2 --0.3 --0.4
--6mA
0.8 0.7 0.6
6mA
5mA
4mA
--1
--5mA --4mA --3mA
--2mA
0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.2 0.3
10
3mA
2mA
IB=0mA
IB=0mA
--1mA
--0.5 IT11149
1mA
0.4 0.5 IT11150
Collector-to-Emitter Voltage, VCE -- V
--3.0
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
3.0
IC -- VCE
20mA
2SB1739
--2.5
2SD2720
2.5
--20mA
18mA
Collector Current, IC -- A
Collector Current, IC -- A
--2.0
--18mA --16mA --14mA --12mA
16mA 14mA
2.0
12mA
--1.5
--10mA --8mA --6mA --4mA
10mA
1.5
8mA
1.0
--1.0
6mA 4mA
--0.5
0.5
0 0 --2 --4 --6 --8
--2mA IB=0mA
--10 IT11151
IB=0mA
0 0 2 4 6 8
2mA
10 IT11152
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
No. A0437-2/5
2SB1739 / 2SD2720
--3.0
IC -- VBE
2SB1739 VCE= --2V
3.0
IC -- VBE
2SD2720 VCE=2V
--2.5
2.5
Collector Current, IC -- A
--2.0
Collector Current, IC -- A
2.0
--1.5
1.5
Ta= -25°C 25°C 75°C
--1.0
1.0
--0.5
0.5
0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT11154
Base-to-Emitter Voltage, VBE -- V
3 2
IT11153 3 2
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
2SB1739 VCE= --2V
2SD2720 VCE=2V
DC Current Gain, hFE
7 5 3 2
C 5° =7 Ta 5°C C 2 5° --2
DC Current Gain, hFE
100
100 7 5 3 2
C 5° =7 °C a T 25 C 5° --2
10 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5
10 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5
Collector Current, IC -- A
7 5
IT11155 7
VCE(sat) -- IC
Collector Current, IC -- A
Ta= -25°C 25°C 75°C
IT11156
VCE(sat) -- IC
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
3 2
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
2SB1739 IC / IB=20
5
2SD2720 IC / IB=20
3 2
C 25°
--0.1 7 5
25°
.