2SC6082

www.DataSheet4U.com Ordering number : ENA0279 2SC6082 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6082 Applications 50V / 15A High-Speed Switching Applications High-speed switching applications (switching regulator, driver circuit). Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C PW≤10µs, duty cycle≤10% Conditions Ratings 60 60 50 6 15 20 3 2 25 150 --55 to +150 Unit V V V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 Conditions VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=330mA VCE=2V, IC=10A 200 50 Ratings min typ max 10 10 560 Unit µA µA Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or materia...