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Silicon MOSFET. 2SK3702 Datasheet

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Silicon MOSFET. 2SK3702 Datasheet






2SK3702 MOSFET. Datasheet pdf. Equivalent




2SK3702 MOSFET. Datasheet pdf. Equivalent





Part

2SK3702

Description

N-Channel Silicon MOSFET



Feature


www.DataSheet4U.com Ordering number : E NN7502 2SK3702 N-Channel Silicon MOSFE T 2SK3702 DC / DC Converter Applicatio ns Features • • • Package Dimens ions unit : mm 2063A [2SK3702] 10.0 3.2 3.5 7.2 Low ON-resistance. Ultrahigh- speed switching. 4V drive. 4.5 2.8 18 .1 16.0 5.6 14.0 1.6 1.2 0.75 2.4 0.7 2.55 1 2 3 2.55 2.4 Specificatio ns Absolute Maximum Rati.
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SK3702 Datasheet


Sanyo Semicon Device 2SK3702

2SK3702; ngs at Ta=25°C Parameter Drain-to-Sourc e Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allo wable Power Dissipation Channel Tempera ture Storage Temperature Symbol VDSS VG SS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions 1 : Gat e 2 : Drain 3 : Source SANYO : TO-220ML Ratings 60 ± 20 18 72 2.0 20 150 --55 to +150 Unit V V A A W W .


Sanyo Semicon Device 2SK3702

°C °C 2.55 2.55 Electrical Characte ristics at Ta=25°C Parameter Drain-to- Source Breakdown Voltage Zero-Gate Volt age Drain Current Gate-to-Source Leakag e Current Cutoff Voltage Forward Transf er Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= ± 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=9A Ratings min 60 1 ± 10 1.2 8 12 2..


Sanyo Semicon Device 2SK3702

6 typ max Unit V µA µA V S Marking : K3702 Continued on next page. Any an d all SANYO products described or conta ined herein do not have specifications that can handle applications that requi re extremely high levels of reliability , such as life-support systems, aircraf t's control systems, or other applicati ons whose failure can be reasonably exp ected to result in s.

Part

2SK3702

Description

N-Channel Silicon MOSFET



Feature


www.DataSheet4U.com Ordering number : E NN7502 2SK3702 N-Channel Silicon MOSFE T 2SK3702 DC / DC Converter Applicatio ns Features • • • Package Dimens ions unit : mm 2063A [2SK3702] 10.0 3.2 3.5 7.2 Low ON-resistance. Ultrahigh- speed switching. 4V drive. 4.5 2.8 18 .1 16.0 5.6 14.0 1.6 1.2 0.75 2.4 0.7 2.55 1 2 3 2.55 2.4 Specificatio ns Absolute Maximum Rati.
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SK3702 Datasheet




 2SK3702
www.DataSheet4U.com
Ordering number : ENN7502
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
2SK3702
N-Channel Silicon MOSFET
2SK3702
DC / DC Converter Applications
Package Dimensions
unit : mm
2063A
10.0
3.2
[2SK3702]
4.5
2.8
Specifications
Absolute Maximum Ratings at Ta=25°C
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
60
±20
18
72
2.0
20
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : K3702
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS= ±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=9A
min
60
1.2
8
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
12 S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71003 TS IM TA-100558 No.7502-1/4




 2SK3702
2SK3702
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=9A, VGS=10V
ID=9A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=18A
VDS=30V, VGS=10V, ID=18A
VDS=30V, VGS=10V, ID=18A
IS=18A, VGS=0
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=30V
ID=9A
RL=3.33
D VOUT
2SK3702
P.G 50S
Ratings
min typ max
Unit
42 55 m
60 85 m
775 pF
125 pF
105 pF
11 ns
65 ns
75 ns
70 ns
19 nC
2.5 nC
4.1 nC
0.98
1.2 V
ID -- VDS
40
Tc=25°C
35
30
25
4V
20
15
10
VGS=3V
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Drain-to-Source Voltage, VDS -- V IT06197
30
VDS=10V
25
ID -- VGS
20
15
10
5
0
0123456
Gate-to-Source Voltage, VGS -- V IT06198
No.7502-2/4




 2SK3702
2SK3702
RDS(on) -- VGS
140
ID=9A
140
120 120
RDS(on) -- Tc
100
80
60 Tc= 75°C
25°C
40 --25°C
20
0
2 3 4 5 6 7 8 9 10
Gate-to-Source Voltage, VGS -- V IT06199
VGS(off) -- Tc
2.5
VDS=10V
ID=1mA
2.0
1.5
1.0
0.5
100
80
60
I DID==9A9A, V, VGGS=S4=V10V
40
20
0
--50 --25
5
3
2
10
7
5
0 25 50 75 100
Case Temperature, Tc -- °C
yfs-- ID
125 150
IT06200
VDS=10V
25°C
Tc=
--25°C
75°C
3
2
0
--50
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
3
2
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IF -- VSD
IT06201
VGS=0
0.3 0.6 0.9 1.2 1.5
Diode Forward Voltage, VSD -- V IT06203
Ciss, Coss, Crss -- VDS
f=1MHz
1000
7
5
3
2
100
7
5
0
Ciss
Coss
Crss
5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT06205
1.0
23
1000
7
5
3
2
5 7 1.0
23
5 7 10
Drain Current, ID -- A
SW Time -- ID
23
IT06202
VDD=30V
VGS=10V
100 td(off)
7
5 tf
3 tr
2
td(on)
10
7
5
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
10
VDS=30V
9 ID=18A
Drain Current, ID -- A
VGS -- Qg
IT06204
8
7
6
5
4
3
2
1
0
0 5 10 15 20
Total Gate Charge, Qg -- nC
IT06206
No.7502-3/4



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