2SK3702JS

www.DataSheet4U.com Ordering number : ENA0632 2SK3702JS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3702JS Features General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Pb-free type. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 60 ±20 18 72 2.0 20 150 --55 to +150 23 18 Unit V V A A W W °C °C mJ A Note : *1 VDD=20V, L=100µH, IAV=18A *2 L≤100µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS= ±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=9A ID=9A, VGS=10V ID=9A, VGS=4V Ratings min 60 1 ±10 1.2 8 12 42 60 55 85 2.6 typ max Unit V µA µA V S mΩ mΩ Marking : K3702 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of relia...