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Silicon MOSFET. 2SK3702JS Datasheet

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Silicon MOSFET. 2SK3702JS Datasheet






2SK3702JS MOSFET. Datasheet pdf. Equivalent




2SK3702JS MOSFET. Datasheet pdf. Equivalent





Part

2SK3702JS

Description

N-Channel Silicon MOSFET



Feature


www.DataSheet4U.com Ordering number : E NA0632 2SK3702JS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3702JS Features • • • • • General-Purpose Switching Device Appli cations Low ON-resistance. Ultrahigh-s peed switching. 4V drive. Avalanche res istance guarantee. Pb-free type. Speci fications Absolute Maximum Ratings at T a=25°C Parameter Drain-to-So.
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SK3702JS Datasheet


Sanyo Semicon Device 2SK3702JS

2SK3702JS; urce Voltage Gate-to-Source Voltage Drai n Current (DC) Drain Current (Pulse) Al lowable Power Dissipation Channel Tempe rature Storage Temperature Avalanche En ergy (Single Pulse) *1 Avalanche Curren t *2 Symbol VDSS VGSS ID IDP PD Tch Tst g EAS IAV PW≤10µs, duty cycle≤1% T c=25°C Conditions Ratings 60 ±20 18 7 2 2.0 20 150 --55 to +150 23 18 Unit V V A A W W °C °C mJ A Not.


Sanyo Semicon Device 2SK3702JS

e : *1 VDD=20V, L=100µH, IAV=18A *2 L 100µH, Single pulse Electrical Chara cteristics at Ta=25°C Parameter Drain- to-Source Breakdown Voltage Zero-Gate V oltage Drain Current Gate-to-Source Lea kage Current Cutoff Voltage Forward Tra nsfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS ID SS IGSS VGS(off) yfs RDS(on)1 RDS (on)2 Conditions ID=1mA, VG.


Sanyo Semicon Device 2SK3702JS

S=0V VDS=60V, VGS=0V VGS= ±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=9A ID=9A, V GS=10V ID=9A, VGS=4V Ratings min 60 1 10 1.2 8 12 42 60 55 85 2.6 typ max Un it V µA µA V S mΩ mΩ Marking : K3702 Continued on next page. Any and all SANYO Semiconductor products descr ibed or contained herein do not have sp ecifications that can handle applicatio ns that require extremely .

Part

2SK3702JS

Description

N-Channel Silicon MOSFET



Feature


www.DataSheet4U.com Ordering number : E NA0632 2SK3702JS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3702JS Features • • • • • General-Purpose Switching Device Appli cations Low ON-resistance. Ultrahigh-s peed switching. 4V drive. Avalanche res istance guarantee. Pb-free type. Speci fications Absolute Maximum Ratings at T a=25°C Parameter Drain-to-So.
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SK3702JS Datasheet




 2SK3702JS
www.DataSheet4U.com
Ordering number : ENA0632
2SK3702JS
SANYO Semiconductors
DATA SHEET
2SK3702JS
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Avalanche resistance guarantee.
Pb-free type.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note : *1 VDD=20V, L=100µH, IAV=18A
*2 L100µH, Single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : K3702
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS= ±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=9A
ID=9A, VGS=10V
ID=9A, VGS=4V
Ratings
60
±20
18
72
2.0
20
150
--55 to +150
23
18
Unit
V
V
A
A
W
W
°C
°C
mJ
A
min
60
1.2
8
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
12 S
42 55 m
60 85 m
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1306QA TI IM TC-00000378 No. A0632-1/5




 2SK3702JS
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm (typ)
7525-002
2SK3702JS
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=18A
VDS=30V, VGS=10V, ID=18A
VDS=30V, VGS=10V, ID=18A
IS=18A, VGS=0V
10.0 3.2 4.5
2.8
Ratings
min typ max
Unit
775 pF
125 pF
105 pF
11 ns
65 ns
75 ns
70 ns
19 nC
2.5 nC
4.1 nC
0.98
1.2 V
1.6
1.2
0.75
123
2.55 2.55
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML(LS)
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=30V
ID=9A
RL=3.33
D VOUT
2SK3702JS
P.G 50S
Avalanche Resistance Test Circuit
50
L
10V
0V
50
2SK3702JS
VDD
No. A0632-2/5




 2SK3702JS
2SK3702JS
ID -- VDS
ID -- VGS
40 30
Tc=25°C
VDS=10V
35
25
30
20
25
4V
20 15
15
10
VGS=3V
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Drain-to-Source Voltage, VDS -- V IT06197
RDS(on) -- VGS
140
ID=9A
120
10
5
0
0123456
Gate-to-Source Voltage, VGS -- V IT06198
RDS(on) -- Tc
140
120
100
80
60 Tc= 75°C
25°C
40 --25°C
20
0
2 3 4 5 6 7 8 9 10
Gate-to-Source Voltage, VGS -- V IT06199
VGS(off) -- Tc
2.5
VDS=10V
ID=1mA
2.0
1.5
1.0
0.5
100
80
60
I DID==9A9A, V, VGGS=S4=V10V
40
20
0
--50 --25
5
3
2
10
7
5
0 25 50 75 100
Case Temperature, Tc -- °C
yfs-- ID
125 150
IT06200
VDS=10V
25°C
Tc=
--25°C
75°C
3
2
0
--50
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IS -- VSD
IT06201
VGS=0V
0.3 0.6 0.9 1.2 1.5
Diode Forward Voltage, VSD -- V IT06203
1.0
23
1000
7
5
3
2
5 7 1.0
23
5 7 10
Drain Current, ID -- A
SW Time -- ID
23
IT06202
VDD=30V
VGS=10V
100
7
5
3
2
10
7
5
0.1
td(off)
tf
tr
td(on)
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Drain Current, ID -- A
IT06204
No. A0632-3/5



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