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Ordering number : ENA0391
2SK3977
SANYO Semiconductors
DATA SHEET
2SK3977
Features
• • •
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 4.5V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 100 ±20 10 40 1 20 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=10V ID=6A, VGS=4.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 100 1 ±10 1.2 6 10 70 85 1560 130 83 16 55 120 80 92 120 2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns
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Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1506PA TI IM TC-00000323 No. A0391-1/4
2SK3977
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Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=50V, VGS=10V, ID=10A VDS=50V, VGS=10V, ID=10A VDS=50V, VGS=10V, ID=10A IS=10A, VGS=0V Ratings min typ 34 5.5 6 0.95 1.2 max Unit nC nC nC V
Package Dimensions
unit : mm (typ) 7518-004
6.5 5.0 2.3
1.5
Package Dimensions
unit : mm (typ) 7003-004
0.5
4
4
7.0
1.5
6.5 5.0
2.3 0.5
5.5
5.5
7.0
0.8 1.6
7.5
1
0.5 0.6
2
0.8
1.2
3
0 to 0.2 1.2
.