2SK3979

www.DataSheet4U.com Ordering number : ENA0263 2SK3979 SANYO Semiconductors DATA SHEET 2SK3979 Features N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 200 ± 30 6 24 1 20 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=200V, VGS=0V VGS=± 24V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3A ID=3A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 200 1 ±1 2.0 2.1 3.5 320 1090 85 35 17.5 26 50 42 450 3.2 typ max Unit V µA µA V S mΩ pF pF pF ns ns ns ns Marking : K3979 Continued on next page. Any and all SANYO Semiconductor pr...