Ultrahigh-Speed Switching Applications
www.DataSheet4U.com Ordering number:ENN6128
N-Channel Silicon MOSFET
3LN02M
Ultrahigh-Speed Switching Applications
Fea...
Description
www.DataSheet4U.com Ordering number:ENN6128
N-Channel Silicon MOSFET
3LN02M
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive.
Package Dimensions
unit:mm 2158
[3LN02M]
0.425
0.15 3
2.1 1.250
0 to 0.1
0.425
1 2 0.65 0.65 2.0
0.3 0.9
0.6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
1 : Gate 2 : Source 3 : Drain SANYO : MCP3
Ratings 30 ±10 0.3 1.2 0.15 150 –55 to +150
0.2
0.3
Unit V V A A W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=150mA ID=150mA, VGS=4V ID=80mA, VGS=2.5V ID=10mA, VGS=1.5V 0.4 0.4 0.56 0.9 1.2 2.6 1.2 1.7 5.2 Conditions Ratings min 30 10 ±10 1.3 typ max Unit V µA µA V S Ω Ω Ω
Marking : YD
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircra...
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