Transistor. 2SA2180 Datasheet

2SA2180 Datasheet PDF


Part

2SA2180

Description

PNP Epitaxial Planar Silicon Transistor

Manufacture

Sanyo Semicon Device

Page 4 Pages
Datasheet
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2SA2180 Datasheet
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Ordering number : EN8526
2SA2180
2SA2180
PNP Epitaxial Planar Silicon Transistor
50V / 5A High-Speed Switching
Applications
Applications
High-speed switching applications (switching regulator, driver circuit).
Features
Adoption of MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
Conditions
VCB=--40V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--125mA
VCE=--2V, IC=--3.75A
VCE=--10V, IC=--300mA
VCB=--10V, f=1MHz
Ratings
--50
--50
--6
--5
--8
--1
2
20
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
min
200
50
Ratings
typ
max
--10
--10
500
Unit
µA
µA
130 MHz
55 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2505FA MS IM TB-00001827 No.8526-1/4

2SA2180 Datasheet
2SA2180
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=--2.5A, IB=--125mA
IC=--2.5A, IB=--125mA
IC=--100µA, IE=0A
IC=--1mA, RBE=
IE=--100µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min typ
--250
--50
--50
--6
75
100
40
max
--500
--1.2
Unit
mV
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
7508-002
10.0
3.2
4.5
2.8
1.6
1.2
0.75 0.7
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
IB1
IB2
VR RB
50+
100µF
OUTPUT
+
470µF
RL
VBE=5V
VCC= --25V
IC=20IB1= --20IB2= --5A
123
2.55 2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
--5.0
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
IC -- VCE
--100mA --80mA
--120mA
--140mA
--60mA
--40mA
--20mA
--10mA
--5mA
IB=0mA
--0.5
--1.0
--1.5
--2.0
Collector-to-Emitter Voltage, VCE -- V IT09974
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
IC -- VCE
--20mA
--16mA
--18mA
--14mA
--12mA
--10mA
--8mA
--6mA
--4mA
--2mA
IB=0mA
--0.2
--0.4
--0.6
--0.8
--1.0
Collector-to-Emitter Voltage, VCE -- V IT09975
No.8526-2/4


Features Datasheet pdf www.DataSheet4U.com Ordering number : E N8526 2SA2180 PNP Epitaxial Planar Si licon Transistor 2SA2180 Applications • 50V / 5A High-Speed Switching Appl ications High-speed switching applicat ions (switching regulator, driver circu it). Features • • • • Adoptio n of MBIT processes. Large current capa citance. Low collector-to-emitter satur ation voltage. High-speed switching. S pecifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage E mitter-to-Base Voltage Collector Curren t Collector Current (Pulse) Base Curren t Collector Dissipation Junction Temper ature Storage Temperature Symbol VCBO V CEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings --50 --50 --6 --5 -- 8 --1 2 20 150 --55 to +150 Unit V V V A A A W W °C °C Electrical Character istics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current D C Current Gain Gain-Bandwidth Product O utput Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob Conditions VCB=-40V, IE=0A.
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