(PDF) 2SA2186 Datasheet PDF | Sanyo Semicon Device





2SA2186 Datasheet PDF

Part Number 2SA2186
Description PNP Epitaxial Planar Silicon Transistor
Manufacture Sanyo Semicon Device
Total Page 4 Pages
PDF Download Download 2SA2186 Datasheet PDF

Features: Datasheet pdf www.DataSheet4U.com Ordering number : E NA0269 2SA2186 2SA2186 Applications PNP Epitaxial Planar Silicon Transi stor High-Current Switching Applicatio ns Voltage regulators, relay drivers, lamp drivers, electrical equipment. Fe atures • • • • Adoption of MBI T processes. High current capacity. Low collector-to-emitter saturation voltag e. High-speed switching. Specification s Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Col lector-to-Emitter Voltage Emitter-to-Ba se Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storag e Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Ratings -5 0 -50 --6 --2 --4 --400 0.9 150 --55 to +150 Unit V V V A A mA W °C °C Elec trical Characteristics at Ta=25°C Para meter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Ban dwidth Product Output Capacitance Colle ctor-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Symbol.

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2SA2186 datasheet
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Ordering number : ENA0269
2SA2186
2SA2186 PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Features
Adoption of MBIT processes.
High current capacity.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
Conditions
VCB=--40V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--100mA
VCE=--2V, IC=--1.5A
VCE=--10V, IC=--300mA
VCB=--10V, f=1MHz
IC=--1A, IB=--50mA
IC=--1A, IB=--50mA
Ratings
--50
--50
--6
--2
--4
--400
0.9
150
--55 to +150
Unit
V
V
V
A
A
mA
W
°C
°C
min
200
40
Ratings
typ
max
--1
--1
560
Unit
µA
µA
420 MHz
16 pF
--0.22
--0.43
V
--0.9 --1.2 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2805EA MS IM TB-00001911 No. A0269-1/4

2SA2186 datasheet
Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
2SA2186
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=--10µA, IE=0A
IC=--1mA, RBE=
IE=--10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
--50
--50
--6
Ratings
typ
35
200
24
max
Unit
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
7519-003
6.9 2.5
1.45 1.0
0.6
0.5
1 23
0.9
0.45
1 : Emitter
2 : Collector
2.54 2.54 3 : Base
SANYO : NMP
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
IB2
RB
50+
100µF
VBE=5V
IC=10IB1= --10IB2= --0.7A
IC OUTPUT
RL
+
470µF
VCC= --25V
IC -- VCE
--2.0
--1.8
--1.6
--40mA
--50mA
--30mA --20mA
--1.4 --10mA
--8mA
--1.2
--6mA
--1.0
--4mA
--0.8
--0.6 --2mA
--0.4
--0.2
0
0
1000
7
IB=0mA
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Collector-to-Emitter Voltage, VCE -- V IT10526
hFE -- IC
VCE= --2V
5 Ta=75°C
25°C
3
--25°C
2
100
7
5
3
--0.01
2 3 5 7 --0.1 2 3 5 7 --1.0 2 3
Collector Current, IC -- A
IT10528
--2.0
VCE= --2V
--1.8
IC -- VBE
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
1000
7
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE -- V IT10527
f T -- IC
VCE= --10V
5
3
2
100
7
5
--0.01
2 3 5 7 --0.1
2 3 5 7 --1.0
23
Collector Current, IC -- A
IT10529
No. A0269-2/4




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