2SC5951

www.DataSheet4U.com Ordering number : ENN7667 2SC5951 NPN Triple Diffused Planar Silicon Transistor 2SC5951 Switching Regulator Applications Features Package Dimensions unit : mm 2042B [2SC5951] 8.0 1.0 1.4 4.0 1.0 3.3 High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process. 3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75 15.5 11.0 0.7 1 2 3 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤300µs, duty cycle≤10% Conditions 4.8 1.7 Specifications 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML Ratings 700 400 8 1.5 3 0.7 1.5 Unit V V V A A A W W °C °C 2.4 Tc=25°C 10 150 --55 to +150 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=400V, IE=0 VEB=5V, IC=0 Ratings min typ max 10 10 Unit µA µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO...