2SC5957M

www.DataSheet4U.com Ordering number : ENA0152 2SC5957M 2SC5957M Features NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications High breakdown voltage and high reliability. High-speed switching. Wide ASO. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤300µs, duty cycle≤10% Conditions Ratings 500 400 7 10 20 3.5 1.75 Tc=25°C 50 150 --55 to +150 Unit V V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 hFE3 Rank hFE M 20 to 40 Conditions VCB=400V, IE=0A VEB=5V, IC=0A VCE=5V, IC=1.2A VCE=5V, IC=6A VCE=5V, IC=1mA Ratings min typ max 10 10 20* 10 10 40* Unit µA µA Continued on next page Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SA...