2SK4066

www.DataSheet4U.com Ordering number : ENA0225A 2SK4066 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4066 Features General-Purpose Switching Device Applications Low ON-resistance. Load switching applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 60 ±20 100 400 1.65 90 150 --55 to +150 850 70 Unit V V A A W W °C °C mJ A Note : *1 VDD=30V, L=200µH, IAV=70A *2 L≤200µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS= ± 16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=50A ID=50A, VGS=10V ID=50A, VGS=4V Ratings min 60 1 ± 10 1.2 51 85 3.6 4.7 4.7 6.6 2.6 typ max Unit V µA µA V S mΩ mΩ Marking : K4066 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as...