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MITSUBISHI IGBT MODULES
CM300DU-34KA
HIGH POWER SWITCHING USE
CM300DU-34KA
G IC ................................................................... 300A G VCES .......................................................... 1700V G Insulated
Type G 2-elements in a pack
APPLICATION General purpose inverters & Servo controlers, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
140 130 110 ±0.25 36 43.8 10 13.8 11.5
10
(15)
9
G2
20.4
E2
(26)
(26)
(26)
Tc measured point
110 ±0.25
C2E1
14.5
E1
3-M8 NUTS
65
4-M4 NUTS
G1
14.5
130
20
40
E2
C1
(15)
Tc measured point
4-φ6.5MOUNTING
HOLES
24.5 -0.5
35 -0.5
+1
+1
C2E1
E2
C1
CIRCUIT DIAGRAM
G1 E1
8
E2 G2
Sep. 2001
MITSUBISHI IGBT MODULES
CM300DU-34KA
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C)
Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1700 ±20 300 600 300 600 1500 –40 ~ +150 –40 ~ +125 3500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 Unit V V A A A A W °C °C V N•m g
(Note 2) (Note 2)
Main terminal to base plate, AC 1 min. Main Terminal M8 Mounting holes M6 G(E) Terminal M4 Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Test conditions VCE = VCES, VGE = 0V IC = 30mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 300A, VGE = 15V Tj = 125°C VCE = 10V VGE = 0V VCC = 1000V, IC = 300A, VGE = 15V VCC = 1000V, IC = 300A VGE1 = VGE2 = 15V RG = 3.1Ω, Inductive load switching operation IE = 300A IE = 300A, VGE = 0V, Tj = 25°C IE = 300A, VGE = 0V, Tj = 125°C IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied*2 (1/2 module) Tc measured point is just under the chips Min. — 4 — — — — — — — — — — — — — — — — — — — Limits Typ. — 5.5 — 3.2 3.8 — — — 1350 — — — — — 11.2 — 2.2 — — 0.010 — Max. 1 7 0.5 4.0 — 42 7.2 2.3 — 800 300 1000 800 600 — 4.6 — 0.083 0.13 — 0.035*3 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V V °C/W °C/W °C/W °C/W
VEC(Note 1) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Thermal resistance*1 Contact thermal resistance Thermal resistance
Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T.