www.DataSheet4U.com
MITSUBISHI HVIGBT MODULES
CM400HB-90H
HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage In...
www.DataSheet4U.com
MITSUBISHI HVIGBT MODULES
CM400HB-90H
HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar
Transistor) Modules INSULATED TYPE
CM400HB-90H
q IC ................................................................... 400A q VCES ....................................................... 4500V q Insulated Type q 1-element in a pack
APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130 114 57±0.25 57±0.25 4 - M8 NUTS
C
20
C
C
C
C
124 ±0.25
G E E E
CM C
E
E
E
G
140
40
CIRCUIT DIAGRAM
3 - M4 NUTS
10.35 10.65 48.8
6 - φ7MOUNTING HOLES
61.5 18 5.2
15 40
38
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar
Transistor Modules)
29.5
28
5
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM400HB-90H
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar
Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V DC, TC = 85°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 4500 ±20 400 800 400 800 4700 –40 ~ +125 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W °C °C V N·m N·m N·m kg
(...
