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CM600DU-24NFH Dataheets PDF



Part Number CM600DU-24NFH
Manufacturers Mitsubishi Electric
Logo Mitsubishi Electric
Description IGBT Module
Datasheet CM600DU-24NFH DatasheetCM600DU-24NFH Datasheet (PDF)

www.DataSheet4U.com MITSUBISHI IGBT MODULES CM600DU-24NFH HIGH POWER SWITCHING USE CM600DU-24NFH ¡IC .. 600A ¡VCES .. 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 110 (8.5) 93 ±0.25 (8.5) (9) E2 G2 6 62 .

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www.DataSheet4U.com MITSUBISHI IGBT MODULES CM600DU-24NFH HIGH POWER SWITCHING USE CM600DU-24NFH ¡IC ................................................................... 600A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 110 (8.5) 93 ±0.25 (8.5) (9) E2 G2 6 62 ±0.25 C2E1 E2 C1 15 80 G1 E1 9.25(10) (22.2) 17.5 CIRCUIT DIAGRAM 18.25 C2E1 E2 C1 4-φ6.5 MOUTING HOLES 3-M6 NUTS 14 25 18 7 14 25 18 7 14 21.5 18 TAB #110. t = 0.5 29 +1.0 –0.5 LABEL 21.2 8.5 (9) Aug.2004 G1 E1 6 E2 G2 MITSUBISHI IGBT MODULES CM600DU-24NFH HIGH POWER SWITCHING USE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC’ (Note 3) Tj Tstg Viso — — — (Tj = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short Operation Pulse Operation Pulse TC = 25°C TC’ = 25°C*4 Conditions (Note 2) (Note 2) (Note 2) (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value Ratings 1200 ±20 600 1200 600 1200 1500 3670 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 Unit V V A A A A W W °C °C V N•m N•m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Rth(j-c’)R RG Parameter Collector cutoff current (Tj = 25°C) Test conditions VCE = VCES, VGE = 0V IC = 60mA, VCE = 10V VGE = VGES, VCE = 0V IC = 600A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 600A, VGE = 15V VCC = 600V, IC = 600A VGE1 = VGE2 = 15V RG = 0.52Ω, Inductive load switching operation IE = 600A IE = 600A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied*2 (1/2 module) IGBT part (1/2 module) FWDi part (1/2 module) Tj = 25°C Tj = 125°C Min. — 4.5 — — — — — — — — — — — — — — — — — — — 0.52 Limits Typ. — 6 — 5.0 5.0 — — — 2700 — — — — — 28 — — — 0.02 — — — Max. 1 7.5 2.0 6.5 — 95 8.0 1.8 — 400 120 700 150 250 — 3.5 0.083 0.15 — 0.034*3 0.06*3 5.2 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V °C/W °C/W °C/W °C/W °C/W Ω Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage (Note 4) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance*4 External gate resistance *1 : TC measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : TC’ measured point is just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. No short circuit capability is designed. Aug.2004 MITSUBISHI IGBT MODULES CM600DU-24NFH HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1200 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 1200 COLLECTOR CURRENT IC (A) Tj = 25°C 1000 800 600 400 200 0 VGE=20 (V) 14 13 15 12 VCE = 10V 1000 800 600 400 200 0 11 10 9 8 0 2 4 6 8 10 Tj = 25°C Tj = 125°C 0 5 10 15 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 9 VGE = 15V 8 Tj = 25°C Tj = 125°C 7 6 5 4 3 2 1 0 0 200 400 600 800 1000 1200 10 Tj = 25°C IC = 1200A 8 6 IC = 600A 4 IC = 240A 2 0 6 8 10 12 14 16 18 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 3 2 CAPACITANCE CHARACTERISTICS (TYPICAL) 103 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 EMITTER CURRENT IE (A) 102 103 7 5 3 2 Tj = 125°C Cies Tj = 25°C 101 Coes Cres 102 7 5 3 2 100 101 0 1 2 3 4 5 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Aug.2004 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI IGBT MODULES CM600DU-24NFH HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103 7 5 td(off) td(on) tf SWITCHING TIM.


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