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MITSUBISHI IGBT MODULES
CM600DU-24NFH
HIGH POWER SWITCHING USE
CM600DU-24NFH
¡IC ................................................................... 600A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack
APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
110 (8.5) 93 ±0.25 (8.5)
(9)
E2 G2
6
62 ±0.25
C2E1
E2
C1
15
80
G1 E1
9.25(10)
(22.2)
17.5
CIRCUIT DIAGRAM
18.25
C2E1
E2
C1
4-φ6.5 MOUTING HOLES 3-M6 NUTS
14 25 18 7
14 25 18 7
14 21.5 18 TAB #110. t = 0.5
29 +1.0 –0.5
LABEL
21.2
8.5
(9)
Aug.2004
G1 E1
6
E2 G2
MITSUBISHI IGBT MODULES
CM600DU-24NFH
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC’ (Note 3) Tj Tstg Viso — — —
(Tj = 25°C)
Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short Operation Pulse Operation Pulse TC = 25°C TC’ = 25°C*4
Conditions
(Note 2) (Note 2) (Note 2) (Note 2)
Main Terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value
Ratings 1200 ±20 600 1200 600 1200 1500 3670 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580
Unit V V A A A A W W °C °C V N•m N•m g
ELECTRICAL CHARACTERISTICS
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Rth(j-c’)R RG Parameter Collector cutoff current
(Tj = 25°C)
Test conditions VCE = VCES, VGE = 0V IC = 60mA, VCE = 10V VGE = VGES, VCE = 0V IC = 600A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 600A, VGE = 15V VCC = 600V, IC = 600A VGE1 = VGE2 = 15V RG = 0.52Ω, Inductive load switching operation IE = 600A IE = 600A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied*2 (1/2 module) IGBT part (1/2 module) FWDi part (1/2 module) Tj = 25°C Tj = 125°C
Min. — 4.5 — — — — — — — — — — — — — — — — — — — 0.52
Limits Typ. — 6 — 5.0 5.0 — — — 2700 — — — — — 28 — — — 0.02 — — —
Max. 1 7.5 2.0 6.5 — 95 8.0 1.8 — 400 120 700 150 250 — 3.5 0.083 0.15 — 0.034*3 0.06*3 5.2
Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V °C/W °C/W °C/W °C/W °C/W Ω
Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage (Note 4) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance*4 External gate resistance
*1 : TC measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : TC’ measured point is just under the chips.
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. No short circuit capability is designed.
Aug.2004
MITSUBISHI IGBT MODULES
CM600DU-24NFH
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 1200
COLLECTOR CURRENT IC (A)
TRANSFER CHARACTERISTICS (TYPICAL) 1200
COLLECTOR CURRENT IC (A)
Tj = 25°C
1000 800 600 400 200 0
VGE=20 (V)
14 13 15 12
VCE = 10V 1000 800 600 400 200 0
11
10 9 8 0 2 4 6 8 10
Tj = 25°C Tj = 125°C 0 5 10 15 20
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
9 VGE = 15V 8 Tj = 25°C Tj = 125°C 7 6 5 4 3 2 1 0 0 200 400 600 800 1000 1200
10
Tj = 25°C IC = 1200A
8
6 IC = 600A 4 IC = 240A
2
0
6
8
10
12
14
16
18
20
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104
3 2
CAPACITANCE CHARACTERISTICS (TYPICAL) 103
CAPACITANCE Cies, Coes, Cres (nF)
7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2
7 5
EMITTER CURRENT IE (A)
102
103
7 5 3 2
Tj = 125°C
Cies
Tj = 25°C
101 Coes Cres
102
7 5 3 2
100
101
0
1
2
3
4
5
VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V)
Aug.2004
EMITTER-COLLECTOR VOLTAGE VEC (V)
MITSUBISHI IGBT MODULES
CM600DU-24NFH
HIGH POWER SWITCHING USE
HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103
7 5
td(off) td(on) tf
SWITCHING TIM.