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Ordering number : ENA0399
CPH3246
SANYO Semiconductors
DATA SHEET
CPH3246
Applications
•
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
DC / DC converters, relay drivers, lamp drivers, motor drivers, inverters.
Features
• • • • • •
Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm). High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings 100 100 60 6.5 3 5 600 0.9 150 --55 to +150 Unit V V V V A A mA W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=50V, IE=0A VEB=4V, IC=0A VCE=2V, IC=100mA VCE=10V, IC=500mA VCB=10V, f=1MHz 300 390 15 Conditions Ratings min typ max 1 1 600 MHz pF Unit µA µA
Marking : DR
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 60506EA MS IM TB-00002380 No. A0399-1/4
CPH3246
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=1A, IB=50mA IC=1A, IB=100mA IC=1A, IB=100mA IC=10µA, IE=0A IC=100µA, RBE=0Ω IC=1mA, RBE=∞ IE=10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 100 100 60 6.5 35 680 24 Ratings min typ 80 70 0.85 max 120 110 1.2 Unit mV mV V V V V V ns ns ns
Package Dimensions
unit : mm 7015A-003
2.9
0.6
Switching Time Test Circuit
0.15
PW=20µs D.C.≤1% INPUT VR10
IB1 OUTPUT IB2 RB
3
0.2
RL
2.8
1.6
0.05
50Ω + 100µF + 470µF VCC=30V
0.6
1
0.95
2
0.4
1 : Base 2 : Emitter 3 : Collector SANYO : CPH3
VBE= --5V
0.2
10IB1= --10IB2=IC=0.5A
0.9
5
IC -- VCE
100mA 80mA
60mA
Collector Current, IC -- A
3.0
IC -- VBE
VCE=2V
Collector Current, IC -- A
4
2.5
2.0
3
40mA 20mA
1.5
10mA
5mA
1
1.0
2mA
0.5
0 0
IB=0mA
0.2 0.4 0.6 0.8 1.0 IT10994
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
--25°C
IT10995
2
Ta=7 5°C 25°C
No. A0399-2/4
CPH3246
7 5
hFE -- IC
Ta=75°C
25°C
VCE=2V
3 2
VCE(sat) -- IC
IC / IB=10
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
DC Current Gain, hFE
3
--25°C
0.1 7 5 3 2
2
= Ta
75
°C
--2
0.01 7 5 3 0.01
C 5 5° 2
°C
100 7 5 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- A
3 2
IT10996 3
VCE(sat) -- IC
Collector Current, IC -- A
IT10997
VBE(sat) -- IC
IC / IB=20
IC / IB=10
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
2
0.1 7 5 3 2
25
Ta C 5° =7
°C
1.0
Ta= --25°C
75°C
25°C
--2
C 5°
7
5
0.01 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5
3 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- A
7
IT10998 7
fT -- IC
VCE=10V
Collector Current, IC -- A
IT10999
Cob -- VCB
f=1MHz
5
Gain-Bandwidth Product, fT -- MHz
5
3 2
Output Capacitance, Cob -- pF
3
2
100 7 5
10 7 5 0.1
3 2 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector Current, IC -- A
10 7 5 3 2
IT11000
Collector-to-Base Voltage, VCB -- V
1.0 0.9
5 7 100 IT11001
ASO
ICP=5A <10µs
PC -- Ta
1m
IC=3A
DC op
10
Collector Current, IC -- A
1.0 7 5 3 2 0.1 7 5 3 2 0.01 7.