CPH3247

www.DataSheet4U.com Ordering number : ENA0400 CPH3247 SANYO Semiconductors DATA SHEET CPH3247 Applications NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications DC / DC converters, relay drivers, lamp drivers, motor drivers, inverters. Features Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm). High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings 120 120 80 6.5 2.5 4 500 0.9 150 --55 to +150 Unit V V V V A A mA W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=70V, IE=0A VEB=4V, IC=0A VCE=5V, IC=100mA VCE=10V, IC=500mA VCB=10V, f=1MHz 300 350 14 Conditions Ratings min typ max 1 1 600 MHz pF Unit µA µA Marking : DS Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle...