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CPH5514 Dataheets PDF



Part Number CPH5514
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description Switching Applications
Datasheet CPH5514 DatasheetCPH5514 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENN7419 CPH5514 PNP Epitaxial Planar Silicon Transistor CPH5514 Switching Applications (with Bias Resistance) Features • • Package Dimensions • • 1 0.95 2 0.4 0.6 1.6 2.8 On-chip bias resistance (R1=10kΩ, R2=10kΩ). unit : mm Composite type with 2 transistors contained in the 2218 CPH package currently in use, improving the mounting efficiency greatly. 5 The CPH5514 is formed with two chips, being equivalent to the 2SA1344, placed in one package. .

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www.DataSheet4U.com Ordering number : ENN7419 CPH5514 PNP Epitaxial Planar Silicon Transistor CPH5514 Switching Applications (with Bias Resistance) Features • • Package Dimensions • • 1 0.95 2 0.4 0.6 1.6 2.8 On-chip bias resistance (R1=10kΩ, R2=10kΩ). unit : mm Composite type with 2 transistors contained in the 2218 CPH package currently in use, improving the mounting efficiency greatly. 5 The CPH5514 is formed with two chips, being equivalent to the 2SA1344, placed in one package. Excellent in thermal equilibrium and pair capability. [CPH5514] 2.9 4 3 0.6 0.05 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC PT Tj Tstg 1unit Conditions 1 : Collector1 2 : Collector2 3 : Base2 4 : Emitter Common 5 : Base1 SANYO : CPH5 Ratings -50 -50 -10 --100 --200 350 500 150 --55 to +150 Unit V V V mA mA mW mW °C °C 0.2 0.4 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO ICEO IEBO hFE fT Cob VCB=--40V, IE=0 VCE=--40V, IE=0 VEB=--5V, IC=0 VCE=--5V, IC=--10mA VCE=--10V, IC=--5mA VCB=--10V, f=1MHz --170 50 200 5.1 MHz pF --250 Conditions Ratings min typ max --0.1 --0.5 --360 Unit µA µA µA Note : The specifications shown above are for each individual transistor. Marking : 3U 0.7 0.9 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22004 TS IM TA-100421 No.7419-1/3 0.2 0.15 CPH5514 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Input OFF-State Voltage Input ON-State Voltage Input Resistance Resistance Ratio Symbol VCE(sat) V(BR)CBO V(BR)CEO VI(off) VI(on) R1 R1 / R2 Conditions IC=-10mA, IB=--0.5mA IC=-10µA, IE=0 IC=-100µA, RBE=∞ VCE=--5V, IC=--100µA VCE=--0.2V, IC=--10mA --50 --50 --0.8 --1.0 7.0 0.9 --1.1 --2.0 10 1.0 --1.5 --4.0 13 1.1 Ratings min typ --1.0 max --0.3 Unit V V V V V kΩ Electrical Connection B1 R1 R2 R2 Tr1 Tr2 Application Circuit Example Input ON-State Voltage : Above 4V EC R1 B2 Input OFF-State Voltage : 0.8V or less VCC RL OUTPUT INPUT R1 R2 C1 C2 GND 3 VI(on) -- IC VCE= --0.2V R1 : 10kΩ R2 : 10kΩ 2 --1000 IC -- VI(off) VCE= --5V R1 : 10kΩ R2 : 10kΩ Input ON-State Voltage, VI(on) -- V 2 Collector Current, IC -- A 7 5 3 2 --100 7 5 3 2 --10 7 5 --10 7 5 3 2 25°C Ta= --25°C 60°C 5 7 --1.0 2 3 5 7 --10 2 3 5 --1.0 0 --0.4 --0.8 Ta=60 ° --1.2 --25°C C 25°C --1.6 --2.0 IT05312 Collector Current, IC -- mA 1000 7 5 IT05311 600 hFE -- IC Input OFF-State Voltage, VI(off) -- V PC -- Ta Collector Dissipation, PC -- mW VCE= --5V R1 : 10kΩ R2 : 10kΩ 500 DC Current Gain, hFE 3 2 400 350 300 100 7 5 3 2 10 5 7 --1.0 2 3 5 25 = Ta °C 60 °C to ta ld iss ip --2 C 5° 200 1u at nit io n 100 0 7 --10 2 3 5 7 --100 2 0 25 50 75 100 125 150 175 IT05368 Collector Current, IC -- mA IT05313 Ambient Temperature, Ta -- °C No.7419-2/3 CPH5514 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other prop.


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