CPH5809

www.DataSheet4U.com Ordering number : ENN7267 CPH5809 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5809 DC / DC Converter Applications Preliminary Features Package Dimensions The CPH5809 composite device consists of followunit : mm ing two devices to facilitate high-density mounting. 2171 One is an N-channel MOSFET that features low ONresistance, ultrahigh-speed switching, and low driving voltage. The other is a schottky barrier diode that features short reverse recovery time and low forward voltage. Each device incorporated in the CPH5809 is equivalent to the MCH3411 and to the SBS005, respectively. [CPH5809] 2.9 5 4 3 0.6 1 0.95 2 0.4 0.6 1.6 2.8 0.05 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 0.2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 30 1 10 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2! 0.8mm) 1unit 30 ±10 3 12 0.9 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : QK Any and all SANYO products descri...