CPH5819

www.DataSheet4U.com Ordering number : ENN7409 CPH5819 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5819 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3408) and a Schottky Barrier Diode (SBS006M) 2171 contained in one package facilitating high-density mounting. 2.9 [MOSFET] 5 4 Low ON-resistance. Ultrahigh-speed switching. 4V drive. [SBD] 1 Short reverse recovery time. 0.95 Low forward voltage. [CPH5819] 3 0.6 0.2 0.15 2 0.4 0.6 1.6 2.8 0.05 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 0.2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 30 0.5 3 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2!0.8mm) 1unit 30 ±20 1.4 5.6 0.8 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : QV Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, s...