CPH6602

www.DataSheet4U.com Ordering number : ENN7145 CPH6602 N-Channel Silicon MOSFET CPH6602 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2202 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. [CPH6602] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions 0.7 0.9 0.2 3 0.95 0.6 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : CPH6 Ratings 20 ±10 2.0 8.0 0.9 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V Ratings min 20 1 ±10 0.4 2.4 3.5 100 130 130 180 1.3 typ max Unit V µA µA V S mΩ mΩ Marking : FM Continued on next page. Any and all SANYO products described or contained herein do not...