CPH6621

www.DataSheet4U.com Ordering number : ENA0847 CPH6621 SANYO Semiconductors DATA SHEET CPH6621 Features P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit Mounted on a ceramic board (900mm2✕0.8mm) Conditions Ratings --20 ±10 --1.5 --6.0 0.9 1.2 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=--1mA, VGS=0V VDS=-20V, VGS=0V VGS=±8V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-0.8A ID=--0.8A, VGS=-4V ID=--0.4A, VGS=-2.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz Ratings min --20 --1 ±10 --0.4 1.38 2.3 180 240 290 40 25 235 340 --1.3 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : WH Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, wi...