P-Channel Silicon MOSFET
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Ordering number : ENA0423
CPH6623
SANYO Semiconductors
DATA SHEET
CPH6623
Features
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P-Channel...
Description
www.DataSheet4U.com
Ordering number : ENA0423
CPH6623
SANYO Semiconductors
DATA SHEET
CPH6623
Features
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Conditions Ratings --30 ±20 --1.5 --6.0 0.9 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0V VDS=-30V, VGS=0V VGS=± 16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-0.8A ID=--0.8A, VGS=-10V ID=--0.4A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --30 --1 ± 10 --1.2 0.9 1.5 210 350 185 30 20 7 4 22 8 275 490 --2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns
Marking : ...
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