P-Channel Silicon MOSFET
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Ordering number : ENA0302
ECH8306
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
ECH8...
Description
www.DataSheet4U.com
Ordering number : ENA0302
ECH8306
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
ECH8306
Features
General-Purpose Switching Device Applications
Low ON-resistance. 4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --100 ± 20 --2 --12 1.6 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--1mA, VGS=0V VDS=-100V, VGS=0V VGS=± 16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=--1A ID=--1A, VGS=-10V ID=--0.5A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=-50V, VGS=--10V, ID=-2...
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