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ECH8601R Dataheets PDF



Part Number ECH8601R
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Datasheet ECH8601R DatasheetECH8601R Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENN8328 ECH8601R N-Channel Silicon MOSFET ECH8601R Features • • • • • General-Purpose Switching Device Applications Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging Switch. Common-drain type. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channe.

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www.DataSheet4U.com Ordering number : ENN8328 ECH8601R N-Channel Silicon MOSFET ECH8601R Features • • • • • General-Purpose Switching Device Applications Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging Switch. Common-drain type. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 20 ±12 6.5 40 1.4 1.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A ID=4A, VGS=4.5V ID=4A, VGS=4.0V ID=4A, VGS=3.1V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 20 1 ±10 0.5 7.0 10 17 18 20 24 1140 420 190 23 24 30 35 1.3 typ max Unit V µA µA V S mΩ mΩ mΩ mΩ pF pF pF Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Marking : WB Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62405PE MS IM TB-00001317 No.8328-1/4 ECH8601R Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=6.5A VDS=10V, VGS=10V, ID=6.5A VDS=10V, VGS=10V, ID=6.5A IS=6.5A, VGS=0V Ratings min typ 425 1500 4000 2860 26.8 1.4 5.1 0.75 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 7011-003 Top View 0.25 0.3 0.15 Electrical Connection 8 7 6 5 8 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain 1 2 3 4 2.3 0.65 2.9 0.25 1 4 2.8 Top view 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Bottom View Switching Time Test Circuit VIN 4V 0V VIN PW=10µs D.C.≤1% ID=3.5A RL=2.86Ω VDD=10V 0.07 0.9 D VOUT G Rg ECH8601R P.G 50Ω S Rg=1kΩ No.8328-2/4 ECH8601R 6.5 ID -- VDS 4.0V 3.0V 2.5 V 4.5V 2.0 V 6.5 6.0 5.5 5.0 ID -- VGS VDS=10V 6.0 5.5 5.0 Drain Current, ID -- A 8.0V 6.0V 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 Drain Current, ID -- A 4.5 4.0 3.5 Ta=7 5°C 0 0.2 0.4 0.6 0.8 1.0 1.2 VGS=1.5V 2.5 2.0 1.5 1.0 0.5 0 0.05 0.10 0.15 0.20 0.25 0.30 IT09488 1.4 25°C 1.6 --25°C 3.0 1.8 Drain-to-Source Voltage, VDS -- V 50 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 50 IT09489 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=2A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 45 40 35 30 25 20 15 10 5 0 0 4A Ta=25°C 45 40 35 30 25 20 15 10 5 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 V =2.5 VGS 2A, = ID =3.1V VGS , A 4 I D= 4.5V , V S= I D=4A G A, I D=4 =4.0V VGS 2 4 6 8 10 IT09490 Gate-to-Source Voltage, VGS -- V 3 yfs -- ID Ambient Temperature, Ta -- °C 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IT09491 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S VDS=10V 2 10 7 5 °C 75 C 3 2 25° 1.0 0.1 0.01 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 10000 7 7 10 IT09492 10 0 0.2 0.4 Ta=7 5 0.6 = Ta --2 25°C -25°C 0.8 °C 5°C Source Current, IS -- A 1.0 1.2 IT09493 SW Time -- ID td(off) Diode Forward Voltage, VSD -- V VGS -- Qg Switching Time, SW Time -- ns 5 3 2 Gate-to-Source Voltage, VGS -- V VDD=10V VGS=4V 9 8 7 6 5 4 3 2 1 VDS=10V ID=6.5A tf tr 1000 7 5 3 2 td(on) 100 0.1 0 2 3 5 7 1.0.


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