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Ordering number : ENN8328
ECH8601R
N-Channel Silicon MOSFET
ECH8601R
Features
• • • • •
General-Purpose Switching Device Applications
Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging Switch. Common-drain type.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 20 ±12 6.5 40 1.4 1.5 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A ID=4A, VGS=4.5V ID=4A, VGS=4.0V ID=4A, VGS=3.1V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 20 1 ±10 0.5 7.0 10 17 18 20 24 1140 420 190 23 24 30 35 1.3 typ max Unit V
µA µA
V S mΩ mΩ mΩ mΩ pF pF pF
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Marking : WB
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62405PE MS IM TB-00001317 No.8328-1/4
ECH8601R
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=6.5A VDS=10V, VGS=10V, ID=6.5A VDS=10V, VGS=10V, ID=6.5A IS=6.5A, VGS=0V Ratings min typ 425 1500 4000 2860 26.8 1.4 5.1 0.75 1.2 max Unit ns ns ns ns nC nC nC V
Package Dimensions unit : mm 7011-003
Top View 0.25 0.3 0.15
Electrical Connection
8
7
6
5
8
5
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain
1 2 3 4
2.3
0.65 2.9
0.25
1
4
2.8
Top view
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8
Bottom View
Switching Time Test Circuit
VIN 4V 0V VIN PW=10µs D.C.≤1% ID=3.5A RL=2.86Ω VDD=10V
0.07
0.9
D
VOUT
G
Rg
ECH8601R P.G 50Ω
S
Rg=1kΩ
No.8328-2/4
ECH8601R
6.5
ID -- VDS
4.0V 3.0V 2.5 V
4.5V
2.0 V
6.5 6.0 5.5 5.0
ID -- VGS
VDS=10V
6.0 5.5 5.0
Drain Current, ID -- A
8.0V 6.0V
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0
Drain Current, ID -- A
4.5 4.0 3.5
Ta=7 5°C
0 0.2 0.4 0.6 0.8 1.0 1.2
VGS=1.5V
2.5 2.0 1.5 1.0 0.5 0
0.05
0.10
0.15
0.20
0.25
0.30 IT09488
1.4
25°C
1.6
--25°C
3.0
1.8
Drain-to-Source Voltage, VDS -- V
50
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
50
IT09489
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
ID=2A
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
45 40 35 30 25 20 15 10 5 0 0
4A
Ta=25°C
45 40 35 30 25 20 15 10 5 0 --60 --40 --20 0 20 40 60 80 100 120 140 160
V =2.5 VGS 2A, = ID =3.1V VGS , A 4 I D=
4.5V , V S= I D=4A G
A, I D=4
=4.0V VGS
2
4
6
8
10 IT09490
Gate-to-Source Voltage, VGS -- V
3
yfs -- ID
Ambient Temperature, Ta -- °C
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
IT09491
IS -- VSD
VGS=0V
Forward Transfer Admittance, yfs -- S
VDS=10V
2
10 7 5
°C 75
C
3 2
25°
1.0 0.1
0.01 2 3 5 7 1.0 2 3 5
Drain Current, ID -- A
10000 7
7 10 IT09492 10
0
0.2
0.4
Ta=7 5
0.6
= Ta
--2
25°C -25°C
0.8
°C
5°C
Source Current, IS -- A
1.0
1.2 IT09493
SW Time -- ID
td(off)
Diode Forward Voltage, VSD -- V
VGS -- Qg
Switching Time, SW Time -- ns
5 3 2
Gate-to-Source Voltage, VGS -- V
VDD=10V VGS=4V
9 8 7 6 5 4 3 2 1
VDS=10V ID=6.5A
tf
tr
1000 7 5 3 2
td(on)
100 0.1
0 2 3 5 7 1.0.