Ultrahigh-Speed Switching Applications
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Ordering number : ENN7406
ECH8606
N-Channel Silicon MOSFET
ECH8606
Ultrahigh-Speed Switching Appl...
Description
www.DataSheet4U.com
Ordering number : ENN7406
ECH8606
N-Channel Silicon MOSFET
ECH8606
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm 2206A
[ECH8606]
0.25 0.3 8 5 0.15
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
2.3 0.65 2.9 Top View 0.25 1 4
2.8
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions
0.9
0.07
Bottom View
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8
Ratings 30 ±20 6 40 1.3 1.5 150 --55 to +150
Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA Ratings min 30 1 ±10 1.0 2.4 typ max Unit V µA µA V
Marking : KF
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications ...
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