ECH8606

www.DataSheet4U.com Ordering number : ENN7406 ECH8606 N-Channel Silicon MOSFET ECH8606 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2206A [ECH8606] 0.25 0.3 8 5 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 2.3 0.65 2.9 Top View 0.25 1 4 2.8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions 0.9 0.07 Bottom View 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 Ratings 30 ±20 6 40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA Ratings min 30 1 ±10 1.0 2.4 typ max Unit V µA µA V Marking : KF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications ...