ECH8609

www.DataSheet4U.com Ordering number : ENN0000 ECH8609 N-Channel and P-Channel Silicon MOSFETs ECH8609 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions unit : mm 2206 [ECH8609] 0.25 The ECH8609 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling hugh-density mounting. 4V drive. 0.3 0.15 5 6 7 8 2.8 2.3 0.25 4 3 2 0.65 2.9 1 0.07 (Side view) 8 7 6 5 (Bottom view) 1 2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% (Side view) 3 4 0.65 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 P-channel -30 ±20 --4 -40 Unit V V A A W W °C °C 0.9 (Top view) Conditions N-channel 30 ±20 6 40 1.3 1.5 150 Mounted on a ceramic board (900mm2✕0.8mm)1unit Mounted on a ceramic board (900mm2✕0.8mm) --55 to +150 Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS IDSS IGSS ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 30 1 ±10 V µA µA Symbol Conditions Ratings min typ max Unit Marking : FB Continued on next page. Any and all SANYO product...