ECH8612

www.DataSheet4U.com Ordering number : EN8258A ECH8612 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8612 Features General-Purpose Switching Device Applications Low ON-resistance. Best suited for load switches. 1.8V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 20 ±8 7 40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±6.4V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A ID=3A, VGS=4.5V ID=1.5A, VGS=2.5V ID=0.5A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 20 1 ±10 0.4 6.6 11 18 25 35 920 150 120 24 36 52 1.2 typ max Unit V µA µA V S mΩ mΩ mΩ pF pF pF Marking : FE Continued on next page. Any and ...