ECH8615 Datasheet (PDF)





ECH8615 Datasheet - P-Channel Silicon MOSFET

ECH8615   ECH8615  

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www.DataSheet4U.com Ordering number : E NA0301 ECH8615 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC H8615 Features • • General-Purpose Switching Device Applications 4V driv e. Composite type, facilitating high-de nsity mounting. Specifications Absolut e Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain

ECH8615 Datasheet - P-Channel Silicon MOSFET

ECH8615   ECH8615  
Current (Pulse) Allowable Power Dissipa tion Total Power Dissipation Channel Te mperature Storage Temperature Symbol VD SS VGSS ID IDP PD PT Tch Tstg PW≤10µ s, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Mounted on a ceramic board (900mm2!0.8mm) Conditio ns Ratings --60 ± 20 --2 --20 1.3 1.5 150 --55 to +150 Unit V V A A W W °C C Electrical Characteristics at Ta








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