ECH8631

www.DataSheet4U.com Ordering number : ENN8274 ECH8631 P-Channel Silicon MOSFET ECH8631 Features General-Purpose Switching Device Applications Low ON-resistance. 2.5V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --12 ±10 --5 --40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS1 IDSS2 IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=--1mA, VGS=0 VDS=-4V, VGS=0 VDS=-12V, VGS=0 VGS=±8V, VDS=0 VDS=-6V, ID=--1mA VDS=-6V, ID=--2.5A ID=--2A, VGS=-5V ID=--1A, VGS=-4.5V ID=--0.5A, VGS=-2.5V VDS=-6V, f=1MHz VDS=-6V, f=1MHz VDS=-6V, f=1MHz Ratings min --12 --1 --10 ±10 --0.4 5.5 9.3 24 26 42 1720 762 720 30 34 56 --1.4 typ max Unit V µA µA µA V S mΩ mΩ mΩ pF pF pF Marking : FZ Continued on next page. Any and all S...