LNJ308G8LRA

ForwardCurreInFt（mA）(planed maintMeaniantnecRneelaattniyvcpeFeeo/,LruDwiammrsiadncioonCuItusnFrteIir（nennt（nmaetunA％nesictd））eyitnyclpue,deplsafnolleodwdiinsgc foontiurnuPreoddtyucptelidf,edciysccloentsitnaugee.d type) （）DiIO（mcd）sMcaionnttiennuaendce/ Luminous Intensity Light Emitting Diodes LNJ308G8LRA Surface Mounting Chip LED SS Type  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Power dissipation PD Forward current IF Pulse forward current * IFP Reverse voltage VR Operating ambient temperature Topr Storage temperature Tstg Note) *: The condition of IFP is duty 10%, Pulse width 1 msec. 30 10 50 4 –25 to +85 –40 to +100 Unit mW mA mA V °C °C  Electro-Optical Characteristics Ta = 25°C Parameter Symbol Luminous intensity Forward current Forward voltage Peak emission wavelength Spectral half band width Reverse current IO IF VF IF = 5 mA λP IF = 5 mA ...