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SEMICONDUCTOR
TECHNICAL DATA
KRX101E
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B
FEATURES
ᴌIncluding two devices in TESV. ᴌWith Built-in bias resistors. ᴌSimplify circuit design. ᴌReduce a quantity of parts and manufacturing process.
A1 A C
B1
(Thin Extereme Super mini type with 5 pin.)
1
5
DIM A
A1 B
2
3
4
B1 C D H J P
MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2+
0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + 5
C
EQUIVALENT CIRCUIT
Q1 R1 OUT Q2 R1 OUT Q1 , Q 2 R1=10KΩ R2=10KΩ
H
P
P
IN
IN R2 COMMON
R2 COMMON
1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 1 Q2
COMMON (EMITTER) IN (BASE) COMMON (EMITTER) OUT (COLLECTOR) OUT (COLLECTOR) IN (BASE)
TESV
EQUIVALENT CIRCUIT (TOP VIEW)
5 4
Marking
5
J
D
Type Name
4
Q1
Q2
BA
1 2 3
1
2
3
Q1 MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC Output Voltage Input Voltage Output Current SYMBOL VO VI IO RATING 50 30, -10 100 UNIT V V Ὠ
Q2 MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC Output Voltage Input Voltage Output Current SYMBOL VO VI IO RATING -50 -30, 10 -100 UNIT V V Ὠ
Q1, Q2 MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. SYMBOL PD * Tj Tstg RATING 200 150 -55ᴕ150 UNIT Ὥ ᴱ ᴱ
2002. 1. 24
Revision No : 1
1/3
KRX101E
Q1 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC Output Cut-off Current DC Current Gain Output Voltage Input Voltage (ON) Input Voltage (OFF) Transition Frequency Input Current SYMBOL IO(OFF) GI VO(ON) VI(ON) VI(OFF) fT * II TEST CONDITION VO=50V, VI=0 VO=5V, IO=10Ὠ IO=10Ὠ, II=0.5Ὠ VO=0.2V, IO=5Ὠ VO=5V, IO=0.1Ὠ VO=10V, IO=5Ὠ VI=5V MIN. 50 1.0 TYP. 80 0.1 1.8 1.2 200 MAX. 500 0.3 2.4 0.88 V V V ὲ Ὠ UNIT. ὦ
Note : * Characteristic of Transistor Only.
Q2 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC Output Cut-off Current DC Current Gain Output Voltage Input Voltage (ON) Input Voltage (OFF) Transition Frequency Input Current SYMBOL IO(OFF) GI VO(ON) VI(ON) VI(OFF) fT * II TEST CONDITION VO=-50V, VI=0 VO=-5V, IO=-10Ὠ IO=-10Ὠ, II=-0.5Ὠ VO=-0.2V, IO=-5Ὠ VO=-5V, IO=-0.1Ὠ VO=-10V, IO=-5Ὠ VI=-5V MIN. 50 -1.0 TYP. 80 -0.1 -1.8 -1.2 200 MAX. -500 -0.3 -2.4 -0.88 V V V ὲ Ὠ UNIT. ὦ
Note : * Characteristic of Transistor Only.
2002. 1. 24
Revision No : 1
2/3
KRX101E
I O - VI(ON)
100 OUTPUT CURRENT I O (mA) 50 30 10 5 3 1 0.5 0.3 0.1 0.3 1 3 10 30 100 INPUT ON VOLTAGE V I(ON) (V)
00 C
Q1
-100 OUTPUT CURRENT I O (mA) -50 -30 -10
Q2 VO =-0.2V
I O - V I(ON)
-25 25 100
VO =0.2V
Ta=1
Ta=25 C Ta=-25 C
Ta=100 C
-5 -3 -1 -0.5 -0.3 -0.1
Ta=25 C Ta=-25 C
-0.3
-1
-3
-10
-30
-100
INPUT ON VOLTAGE VI(ON) (V)
10k OUTPUT CURRENT I O (µA) 5k 3k 1k
Q1
I O - VI(OFF)
-10k
VO =5V
Q2 VO =-5V
I O - VI(OFF)
OUTPUT CURRENT I O (µA)
-5k -3k -1k
Ta=
Ta=
100 50 30 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INPUT OFF VOLTAGE V I(OFF) (V)
-100 -50 -30 -0.6
-0.8
-1.0
-1.2
-1.4
Ta= -25
Ta=
Ta=
Ta=
500 300
-500 -300
25 C
C
C
C
C
100
-25
100
25
C
-1.6
-1.8
-2.0
INPUT OFF VOLTAGE V I(OFF) (V)
300 DC CURRENT GAIN G I
Q1 VO =5V
G I - IO
300 DC CURRENT GAIN G I
Ta=100 C
Q2 VO =-5V
G I - IO
Ta=100 C
100 50 30
Ta=25 C Ta=-25 C
100 50 30
Ta=25 C Ta=-25 C
10 5 0.5
10 5
1
3
10
30
100
-1
-3
-10
-30
-100
OUTPUT CURRENT IO (mA)
OUTPUT CURRENT IO (mA)
2002. 1. 24
Revision No : 1
3/3
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