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KRX101E Dataheets PDF



Part Number KRX101E
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR PNP/NPN TRANSISTOR
Datasheet KRX101E DatasheetKRX101E Datasheet (PDF)

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KRX101E EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES ᴌIncluding two devices in TESV. ᴌWith Built-in bias resistors. ᴌSimplify circuit design. ᴌReduce a quantity of parts and manufacturing process. A1 A C B1 (Thin Extereme Super mini type with 5 pin.) 1 5 DIM A A1 B 2 3 4 B1 C D H J P MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2+ 0.50 _ 0.05 0..

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KRX101E EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES ᴌIncluding two devices in TESV. ᴌWith Built-in bias resistors. ᴌSimplify circuit design. ᴌReduce a quantity of parts and manufacturing process. A1 A C B1 (Thin Extereme Super mini type with 5 pin.) 1 5 DIM A A1 B 2 3 4 B1 C D H J P MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2+ 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + 5 C EQUIVALENT CIRCUIT Q1 R1 OUT Q2 R1 OUT Q1 , Q 2 R1=10KΩ R2=10KΩ H P P IN IN R2 COMMON R2 COMMON 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 1 Q2 COMMON (EMITTER) IN (BASE) COMMON (EMITTER) OUT (COLLECTOR) OUT (COLLECTOR) IN (BASE) TESV EQUIVALENT CIRCUIT (TOP VIEW) 5 4 Marking 5 J D Type Name 4 Q1 Q2 BA 1 2 3 1 2 3 Q1 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Output Voltage Input Voltage Output Current SYMBOL VO VI IO RATING 50 30, -10 100 UNIT V V Ὠ Q2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Output Voltage Input Voltage Output Current SYMBOL VO VI IO RATING -50 -30, 10 -100 UNIT V V Ὠ Q1, Q2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. SYMBOL PD * Tj Tstg RATING 200 150 -55ᴕ150 UNIT Ὥ ᴱ ᴱ 2002. 1. 24 Revision No : 1 1/3 KRX101E Q1 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC Output Cut-off Current DC Current Gain Output Voltage Input Voltage (ON) Input Voltage (OFF) Transition Frequency Input Current SYMBOL IO(OFF) GI VO(ON) VI(ON) VI(OFF) fT * II TEST CONDITION VO=50V, VI=0 VO=5V, IO=10Ὠ IO=10Ὠ, II=0.5Ὠ VO=0.2V, IO=5Ὠ VO=5V, IO=0.1Ὠ VO=10V, IO=5Ὠ VI=5V MIN. 50 1.0 TYP. 80 0.1 1.8 1.2 200 MAX. 500 0.3 2.4 0.88 V V V ὲ Ὠ UNIT. ὦ Note : * Characteristic of Transistor Only. Q2 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC Output Cut-off Current DC Current Gain Output Voltage Input Voltage (ON) Input Voltage (OFF) Transition Frequency Input Current SYMBOL IO(OFF) GI VO(ON) VI(ON) VI(OFF) fT * II TEST CONDITION VO=-50V, VI=0 VO=-5V, IO=-10Ὠ IO=-10Ὠ, II=-0.5Ὠ VO=-0.2V, IO=-5Ὠ VO=-5V, IO=-0.1Ὠ VO=-10V, IO=-5Ὠ VI=-5V MIN. 50 -1.0 TYP. 80 -0.1 -1.8 -1.2 200 MAX. -500 -0.3 -2.4 -0.88 V V V ὲ Ὠ UNIT. ὦ Note : * Characteristic of Transistor Only. 2002. 1. 24 Revision No : 1 2/3 KRX101E I O - VI(ON) 100 OUTPUT CURRENT I O (mA) 50 30 10 5 3 1 0.5 0.3 0.1 0.3 1 3 10 30 100 INPUT ON VOLTAGE V I(ON) (V) 00 C Q1 -100 OUTPUT CURRENT I O (mA) -50 -30 -10 Q2 VO =-0.2V I O - V I(ON) -25 25 100 VO =0.2V Ta=1 Ta=25 C Ta=-25 C Ta=100 C -5 -3 -1 -0.5 -0.3 -0.1 Ta=25 C Ta=-25 C -0.3 -1 -3 -10 -30 -100 INPUT ON VOLTAGE VI(ON) (V) 10k OUTPUT CURRENT I O (µA) 5k 3k 1k Q1 I O - VI(OFF) -10k VO =5V Q2 VO =-5V I O - VI(OFF) OUTPUT CURRENT I O (µA) -5k -3k -1k Ta= Ta= 100 50 30 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INPUT OFF VOLTAGE V I(OFF) (V) -100 -50 -30 -0.6 -0.8 -1.0 -1.2 -1.4 Ta= -25 Ta= Ta= Ta= 500 300 -500 -300 25 C C C C C 100 -25 100 25 C -1.6 -1.8 -2.0 INPUT OFF VOLTAGE V I(OFF) (V) 300 DC CURRENT GAIN G I Q1 VO =5V G I - IO 300 DC CURRENT GAIN G I Ta=100 C Q2 VO =-5V G I - IO Ta=100 C 100 50 30 Ta=25 C Ta=-25 C 100 50 30 Ta=25 C Ta=-25 C 10 5 0.5 10 5 1 3 10 30 100 -1 -3 -10 -30 -100 OUTPUT CURRENT IO (mA) OUTPUT CURRENT IO (mA) 2002. 1. 24 Revision No : 1 3/3 .


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