KRX105E

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KRX105E EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES ᴌIncluding two devices in TESV. ᴌWith Built-in bias resistors. ᴌSimplify circuit design. ᴌReduce a quantity of parts and manufacturing process. A1 A C B1 (Thin Extreme Super mini type with 5 pin.) 1 5 DIM A A1 B 2 3 4 B1 C D H J P MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2+ 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + 5 C EQUIVALENT CIRCUIT Q1 R1 C Q2 R1 R1=4.7KΩ (Q1 , Q 2 COMMON) E C H P P B B 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 1 Q2 COMMON (EMITTER) IN (BASE) COMMON (EMITTER) OUT (COLLECTOR) OUT (COLLECTOR) IN (BASE) E TESV EQUIVALENT CIRCUIT (TOP VIEW) 5 4 Marking 5 J D Type Name 4 Q2 Q1 BE 1 2 3 1 2 3 Q1 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO VCEO VEBO IC RATING 50 50 5 100 UNIT V V V Ὠ Q2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO VCEO VEBO IC RATING -50 -50 -5 -100 UNIT V V V Ὠ Q1, Q2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. SYMBOL PC * Tj Tstg RATING 200 150 -55ᴕ150 UNIT Ὥ ᴱ ᴱ 2002. 1. 24 Revision No : 1 1/3 KRX105E Q1 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC C...