SIA414DJ

www.DataSheet4U.com New Product SiA414DJ Vishay Siliconix N-Channel 8-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.011 at VGS = 4.5 V 0.013 at VGS = 2.5 V 8 0.016 at VGS = 1.8 V 0.022 at VGS = 1.5 V 0.041 at VGS = 1.2 V ID (A)a 12 12 12 12 12 19 nC Qg (Typ) FEATURES TrenchFET® Power MOSFET New Thermally Enhaced PowerPAK® SC70 Package - Small Footprint Area RoHS COMPLIANT APPLICATIONS Load Switch for Portable Applications PowerPAK SC-70-6L-Single D 1 D 2 D 3 6 D 5 D S 4 S 2.05 mm G Part # code Marking Code ACX XXX Lot Traceability and Date code S G 2.05 mm Ordering Information: SiA414DJ-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM IS PD TJ, Tstg Limit 8 ±5 12a 12a 12a, b, c 11.6b, c 40 12a 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit RthJA t ≤ 5 sec 28 36 Maximum Junction-to-Ambientb, f °C/W RthJC 5.3 6.5 Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. ...