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IGBT Module. CM1200HA-34H Datasheet

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IGBT Module. CM1200HA-34H Datasheet






CM1200HA-34H Module. Datasheet pdf. Equivalent




CM1200HA-34H Module. Datasheet pdf. Equivalent





Part

CM1200HA-34H

Description

IGBT Module



Feature


www.DataSheet4U.com MITSUBISHI HVIGBT M ODULES CM1200HA-34H HVIGBT (High Volta ge Insulated Gate Bipolar Transistor) M odules HIGH POWER SWITCHING USE INSULAT ED TYPE CM1200HA-34H q IC ........... ....................................... .............. 1200A q VCES ........... ....................................... ..... 1700V q Insulated Type q 1-elemen t in a pack APPLI.
Manufacture

Mitsubishi Electric

Datasheet
Download CM1200HA-34H Datasheet


Mitsubishi Electric CM1200HA-34H

CM1200HA-34H; CATION Inverters, Converters, DC chopper s, Induction heating, DC to DC converte rs. OUTLINE DRAWING & CIRCUIT DIAGRAM D imensions in mm 130 114 57±0.25 57±0 .25 4 - M8 NUTS C C 20 C C C 124±0 .25 140 30 G E E E CM E E E C G CIRCUIT DIAGRAM 16.5 3 - M4 NUTS 2.5 1 8.5 61.5 18 6 - φ 7 MOUNTING HOLES 5 35 11 14.5 38 LABEL HVIGBT MODULES ( High Voltage Insulated.


Mitsubishi Electric CM1200HA-34H

Gate Bipolar Transistor Modules) 31.5 28 5 Mar. 2003 MITSUBISHI HVIGBT MO DULES CM1200HA-34H HVIGBT (High Voltag e Insulated Gate Bipolar Transistor) Mo dules HIGH POWER SWITCHING USE INSULATE D TYPE MAXIMUM RATINGS (Tj = 25°C) Sy mbol VCES VGES IC ICM IE (Note 2) IEM ( Note 2) PC (Note 3) Tj Tstg Viso — Item Collector-emitter voltage Gate-e mitter voltage Collecto.


Mitsubishi Electric CM1200HA-34H

r current Emitter current Maximum collec tor dissipation Junction temperature St orage temperature Isolation voltage Mou nting torque Mass VGE = 0V VCE = 0V DC, TC = 95°C Pulse Pulse TC = 25°C, IGB T part Conditions Ratings 1700 ±20 120 0 2400 1200 2400 13800 –40 ~ +150 – 40 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W °C °C V N·m N·m N·m kg (Not.

Part

CM1200HA-34H

Description

IGBT Module



Feature


www.DataSheet4U.com MITSUBISHI HVIGBT M ODULES CM1200HA-34H HVIGBT (High Volta ge Insulated Gate Bipolar Transistor) M odules HIGH POWER SWITCHING USE INSULAT ED TYPE CM1200HA-34H q IC ........... ....................................... .............. 1200A q VCES ........... ....................................... ..... 1700V q Insulated Type q 1-elemen t in a pack APPLI.
Manufacture

Mitsubishi Electric

Datasheet
Download CM1200HA-34H Datasheet




 CM1200HA-34H
www.DataSheet4U.com
MITSUBISHI HVIGBT MODULES
CM1200HA-34H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
CM1200HA-34H
q IC ................................................................ 1200A
q VCES ....................................................... 1700V
q Insulated Type
q 1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
130
114
57±0.25
CC
CM E
E
E
C
G
3 - M4 NUTS
16.5
2.5
18.5
61.5
18
4 - M8 NUTS
CC
C
G
E
EE
CIRCUIT DIAGRAM
6 - φ 7 MOUNTING HOLES
11
14.5
5
35
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003




 CM1200HA-34H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Tstg
Viso
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
VGE = 0V
VCE = 0V
DC, TC = 95°C
Pulse
Conditions
(Note 1)
Pulse
(Note 1)
TC = 25°C, IGBT part
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Ratings
1700
±20
1200
2400
1200
2400
13800
–40 ~ +150
–40 ~ +125
4000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Item
Conditions
Min
ICES Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th)
Gate-emitter
threshold voltage
IC = 120mA, VCE = 10V
4.5
IGES
Gate-leakage current
VGE = VGES, VCE = 0V
VCE(sat)
Collector-emitter
saturation voltage
Tj = 25°C
Tj = 125°C
IC = 1200A, VGE = 15V
(Note 4)
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
QG Total gate charge
VCC = 850V, IC = 1200A, VGE = 15V
td (on)
Turn-on delay time
VCC = 850V, IC = 1200A
tr Turn-on rise time
VGE1 = VGE2 = 15V
td (off)
Turn-off delay time
RG = 1.6
tf Turn-off fall time
Resistive load switching operation
VEC (Note 2) Emitter-collector voltage
IE = 1200A, VGE = 0V
trr (Note 2) Reverse recovery time
IE = 1200A
Qrr (Note 2) Reverse recovery charge
die / dt = –2400A / µs
Rth(j-c)Q
Rth(j-c)R
Thermal resistance
Junction to case, IGBT part
Junction to case, FWDi part
Rth(c-f) Contact thermal resistance Case to fin, conductive grease applied
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Limits
Typ
5.5
2.75
3.30
140
20.0
7.6
6.6
2.40
200
0.008
Max
30
6.5
0.5
3.58
1.20
1.50
2.00
0.60
3.12
2.00
0.009
0.028
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003




 CM1200HA-34H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
2400
Tj = 25°C
VGE = 12V
VGE = 14V
2000
VGE = 15V
VGE = 20V
1600
VGE = 11V
VGE = 13V
VGE = 10V
1200
800
VGE = 9V
400 VGE = 8V
VGE = 7V
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
2400
VCE = 10V
2000
1600
1200
800
400 Tj = 25°C
Tj = 125°C
0
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
IC = 2400A
8
IC = 1200A
6
4
2
IC = 480A
0
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0 400 800 1200 1600 2000 2400
EMITTER CURRENT IE (A)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
103
7
5
3
2 Cies
102
7
5
3
2
101
7
5 VGE = 0V, Tj = 25°C
3
2
Cies, Coes : f = 100kHz
Cres : f = 1MHz
Coes
Cres
100
101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2003



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