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IGBT Module. CM1200HA-50H Datasheet

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IGBT Module. CM1200HA-50H Datasheet






CM1200HA-50H Module. Datasheet pdf. Equivalent




CM1200HA-50H Module. Datasheet pdf. Equivalent





Part

CM1200HA-50H

Description

IGBT Module



Feature


www.DataSheet4U.com PRE on. ange. ific ati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som AR LIMIN Y MITSUBISHI HVI GBT MODULES CM1200HA-50H HIGH POWER SW ITCHING USE INSULATED TYPE HVIGBT (Hig h Voltage Insulated Gate Bipolar Transi stor) Modules CM1200HA-50H q IC ..... ....................................... ...................
Manufacture

Mitsubishi Electric

Datasheet
Download CM1200HA-50H Datasheet


Mitsubishi Electric CM1200HA-50H

CM1200HA-50H; .. 1200A q VCES ........................ ............................... 2500V q Insulated Type q 1-element in a pack APPLICATION Inverters, Converters, DC c hoppers, Induction heating, DC to DC co nverters. OUTLINE DRAWING & CIRCUIT DIA GRAM Dimensions in mm 57±0.25 190 17 1 57±0.25 57±0.25 6 - M8 NUTS 20 E E C C C C 40 124±0.25 140 G C CM E E E C E G .


Mitsubishi Electric CM1200HA-50H

CIRCUIT DIAGRAM 20.25 41.25 3 - M4 NUT S 79.4 8 - φ 7MOUNTING HOLES 61.5 13 61.5 5.2 15 40 38 28 HVIGBT MODULE S (High Voltage Insulated Gate Bipolar Transistor Modules) 5 LABEL 30 Mar. 2001 PRE on. ange. ificati h l spec ct to c a finaare subje t o n is s it i s m h li e: T tric Notice parame Som A R LIMIN Y MITSUBISHI HVIGBT MODULES CM1200HA-50H HIGH P.


Mitsubishi Electric CM1200HA-50H

OWER SWITCHING USE INSULATED TYPE HVIGB T (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS (T j = 25 °C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Ts tg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collect or dissipation Junction temperature Sto rage temperature Isolat.

Part

CM1200HA-50H

Description

IGBT Module



Feature


www.DataSheet4U.com PRE on. ange. ific ati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som AR LIMIN Y MITSUBISHI HVI GBT MODULES CM1200HA-50H HIGH POWER SW ITCHING USE INSULATED TYPE HVIGBT (Hig h Voltage Insulated Gate Bipolar Transi stor) Modules CM1200HA-50H q IC ..... ....................................... ...................
Manufacture

Mitsubishi Electric

Datasheet
Download CM1200HA-50H Datasheet




 CM1200HA-50H
www.DataSheet4U.com
PRELIMINARYNSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1200HA-50H
q IC ................................................................ 1200A
q VCES ....................................................... 2500V
q Insulated Type
q 1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
190
171
57±0.25
57±0.25
6 - M8 NUTS
CC
CM E
E
C EG
3 - M4 NUTS
79.4
20.25
41.25
EC
CE
G
C
E
CIRCUIT DIAGRAM
8 - φ 7MOUNTING HOLES
61.5
61.5
13
15
40
5.2
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2001




 CM1200HA-50H
PRELIMINARYNSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Tstg
Viso
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
Conditions
VGE = 0V
VCE = 0V
TC = 25°C
Pulse
(Note 1)
TC = 25°C
Pulse
(Note 1)
TC = 25°C, IGBT part
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Ratings
2500
±20
1200
2400
1200
2400
10400
–40 ~ +150
–40 ~ +125
6000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
2.2
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Item
Conditions
Min
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th)
Gate-emitter
threshold voltage
IC = 120mA, VCE = 10V
4.5
IGES
VCE(sat)
Cies
Coes
Cres
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C
IC = 1200A, VGE = 15V
VCE = 10V
VGE = 0V
(Note 4)
QG Total gate charge
VCC = 1250V, IC = 1200A, VGE = 15V
td (on)
Turn-on delay time
VCC = 1250V, IC = 1200A
tr
td (off)
tf
Turn-on rise time
Turn-off delay time
Turn-off fall time
VGE1 = VGE2 = 15V
RG = 2.5
Resistive load switching operation
VEC (Note 2)
trr (Note 2)
Qrr (Note 2)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
IE = 1200A, VGE = 0V
IE = 1200A
die / dt = –2400A / µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Limits
Typ
6.0
3.20
3.60
120
13.2
4.0
5.4
2.90
250
0.006
Max
15
7.5
0.5
4.16
1.60
2.00
2.50
1.00
3.77
1.20
0.012
0.024
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2001




 CM1200HA-50H
PRELIMINARYNSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
2400
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj = 25°C
VGE = 12V
2000 VGE = 13V
VGE = 14V
1600 VGE = 15V
VGE = 20V
VGE = 11V
1200
VGE = 10V
800
VGE = 9V
400
VGE = 8V
VGE = 7V
0
0 2 4 6 8 10
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
2400
2000
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = 10V
1600
1200
800
400
Tj = 25°C
Tj = 125°C
0
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 2400A
6
IC = 1200A
4
2
IC = 480A
0
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
104
7
5
Tj = 25°C
3
2
103
7
5
3
2
102
7
5
3
2
101
012345
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE VS. VCE
(TYPICAL)
103
7 VGE = 0V, Tj = 25°C
5 Cies, Coes : f = 100kHz
3 Cres : f = 1MHz
2
Cies
102
7
5
3
2
101
7
Coes
5
3 Cres
2
100
101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2001



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