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www.DataSheet4U.com
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AR LIMIN
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MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar
Transistor) Modules
CM1200HA-50H
q IC ................................................................ 1200A q VCES ....................................................... 2500V q Insulated Type q 1-element in a pack
APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
190 171 57±0.25
57±0.25
6 - M8 NUTS
20
E
E
C
C
C
C
40 124±0.25 140
G C
CM
E
E
E
C
E
G
CIRCUIT DIAGRAM
20.25 41.25 3 - M4 NUTS 79.4 8 - φ 7MOUNTING HOLES
61.5 13
61.5 5.2
15 40
38
28
HVIGBT MODULES (High Voltage Insulated Gate Bipolar
Transistor Modules)
5
LABEL
30
Mar. 2001
PRE
on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som
AR LIMIN
Y
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar
Transistor) Modules
MAXIMUM RATINGS (Tj = 25 °C)
Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting...
