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IGBT Module. CM1200HB-50H Datasheet

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IGBT Module. CM1200HB-50H Datasheet






CM1200HB-50H Module. Datasheet pdf. Equivalent




CM1200HB-50H Module. Datasheet pdf. Equivalent





Part

CM1200HB-50H

Description

IGBT Module



Feature


www.DataSheet4U.com MITSUBISHI HVIGBT M ODULES CM1200HB-50H HIGH POWER SWITCHI NG USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Mod ules INSULATED TYPE CM1200HB-50H q IC ...................................... .......................... 1200A q VCES ...................................... ................. 2500V q Insulated Typ e q 1-element in a.
Manufacture

Mitsubishi Electric

Datasheet
Download CM1200HB-50H Datasheet


Mitsubishi Electric CM1200HB-50H

CM1200HB-50H; pack APPLICATION Inverters, Converters , DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCU IT DIAGRAM Dimensions in mm 57 ±0.25 190 171 57 ±0.25 57 ±0.25 6 - M8 N UTS C C C C G E C C C 20 CM C E E E 124 ±0.25 140 E E E 40 CIRCUIT DIAGRAM E G 20.25 41.25 3 - M4 NUTS 79.4 61.5 13 61.5 5.2 15 40 8 - φ7MOUNTING HOLES 38 .


Mitsubishi Electric CM1200HB-50H

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) 5 LA BEL 29.5 28 Mar. 2003 MITSUBISHI HV IGBT MODULES CM1200HB-50H 2nd-Version HVIGBT (High Voltage Insulated Gate Bip olar Transistor) Modules HIGH POWER SWI TCHING USE INSULATED TYPE MAXIMUM RATI NGS (Tj = 25°C) Symbol VCES VGES IC IC M I E (Note 2) I EM(Note 2) P C (Note 3 ) Tj Tstg Viso — — .


Mitsubishi Electric CM1200HB-50H

Item Collector-emitter voltage Gate-emit ter voltage Collector current Emitter c urrent Maximum collector dissipation Ju nction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V DC, TC = 110°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 2500 ±20 1200 2400 1200 2400 15600 –40 ~ +150 –40 ~ +125 6000 6. 67 ~ 13.00 2.84 ~ 6.00 0..

Part

CM1200HB-50H

Description

IGBT Module



Feature


www.DataSheet4U.com MITSUBISHI HVIGBT M ODULES CM1200HB-50H HIGH POWER SWITCHI NG USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Mod ules INSULATED TYPE CM1200HB-50H q IC ...................................... .......................... 1200A q VCES ...................................... ................. 2500V q Insulated Typ e q 1-element in a.
Manufacture

Mitsubishi Electric

Datasheet
Download CM1200HB-50H Datasheet




 CM1200HB-50H
www.DataSheet4U.com
MITSUBISHI HVIGBT MODULES
CM1200HB-50H
HIGH POWER SWITCHING USE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1200HB-50H
q IC ................................................................ 1200A
q VCES ....................................................... 2500V
q Insulated Type
q 1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
190
171
57±0.25
57±0.25
6 - M8 NUTS
C
CCC
C CC
G
E
EEE
CM E
CEG
E
3 - M4 NUTS
20.25
79.4
41.25
61.5
61.5
13
E CIRCUIT DIAGRAM
8 - φ7MOUNTING HOLES
15
40
5.2
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003




 CM1200HB-50H
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HB-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
Item
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC Collector current
ICM
IE (Note 2) Emitter current
IEM(Note 2)
PC (Note 3) Maximum collector dissipation
Tj Junction temperature
Tstg Storage temperature
Viso Isolation voltage
— Mounting torque
— Mass
VGE = 0V
VCE = 0V
DC, TC = 110°C
Pulse
Conditions
(Note 1)
Pulse
(Note 1)
TC = 25°C, IGBT part
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Ratings
2500
±20
1200
2400
1200
2400
15600
–40 ~ +150
–40 ~ +125
6000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
2.2
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Item
Conditions
Min
ICES Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th)
Gate-emitter
threshold voltage
IC = 120mA, VCE = 10V
4.5
IGES
Gate-leakage current
VGE = VGES, VCE = 0V
VCE(sat)
Collector-emitter
saturation voltage
Tj = 25°C
Tj = 125°C
IC = 1200A, VGE = 15V
(Note 4)
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
QG Total gate charge
VCC = 1250V, IC = 1200A, VGE = 15V
td (on)
Turn-on delay time
VCC = 1250V, IC = 1200A
tr Turn-on rise time
VGE1 = VGE2 = 15V
td (off)
tf
Turn-off delay time
Turn-off fall time
RG = 1.6
Resistive load switching operation
VEC(Note 2)
trr (Note 2)
Qrr (Note 2)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
IE = 1200A, VGE = 0V
IE = 1200A,
die / dt = –2400A / µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
(Note 1)
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Limits
Typ
6.0
2.80
3.15
180
19.8
6.0
8.1
2.50
350
0.006
Max
15
7.5
0.5
3.64
1.60
2.00
2.50
1.00
3.25
1.20
0.008
0.016
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003




 CM1200HB-50H
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HB-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
2400
Tj=25°C
VGE=13V
2000 VGE=14V
VGE=12V
VGE=15V
1600
VGE=20V
VGE=11V VGE=10V
1200
VGE=9V
800
400 VGE=8V
VGE=7V
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
2400
VCE=10V
2000
1600
1200
800
400
Tj = 25°C
Tj = 125°C
0
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE=15V
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
6 IC = 2400A
IC = 1200A
4
2
IC = 480A
0
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0 400 800 1200 1600 2000 2400
EMITTER CURRENT IE (A)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
103
7
5
3
2 Cies
102
7
5
3
2
101 Coes
7
5
3 VGE = 0V, Tj = 25°C
2 Cies, Coes : f = 100kHz
Cres
Cres : f = 1MHz
100
101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2003



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