www.DataSheet4U.com
MITSUBISHI HVIGBT MODULES
CM1200HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Tra...
www.DataSheet4U.com
MITSUBISHI HVIGBT MODULES
CM1200HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar
Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM1200HC-34H
q IC ................................................................ 1200A q VCES ....................................................... 1700V q Insulated Type q 1-element in a Pack q AISiC Baseplate q Soft Reverse Recovery Diode
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130 114 57±0.25 57±0.25 4 - M8 NUTS
C C
C
C
C
20
124±0.25
CM
E
E
140
30
G E E E
E C
G
CIRCUIT DIAGRAM
16.5 3 - M4 NUTS 2.5 18.5 61.5
screwing depth min. 7.7
6 - φ 7 MOUNTING HOLES 5
screwing depth min. 11.7
35 11 14.5
18
38 +1 0
28 +1 0
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar
Transistor) Modules
31.5
5
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar
Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS
Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 85°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 1700 ...
